InN quantum dots on GaN nanowires grown by MOVPE
Bi, Zhaoxia LU
; Lindgren, David
LU
; Johansson, Jonas
LU
; Ek, Martin
LU
; Wallenberg, Reine
LU
; Gustafsson, Anders
LU
; Borgström, Magnus
LU
; Ohlsson, Jonas
LU
; Monemar, Bo
LU
and Samuelson, Lars
LU
(2014)
10th International Conference on Nitride Semiconductors (ICNS)
In physica status solidi (c)
11.
p.421-424
- Abstract
- In this work, growth of InN quantum dots (QDs) on GaN nanowires (NWs) by metal-organic vapour phase epitaxy is demonstrated, illustrating the feasibility to combine 0D and 1D structures for nitride semiconductors. Selective area growth was used to generate arrays of c-oriented GaN NWs using Si3N4 as the mask material. In general, InN QDs tend to form at the NW edges between the m-plane side facets, but the QD growth can also be tuned to the side facets by controlling the growth temperature and the growth rate. TEM characterization reveals that I1-type stacking faults are formed in the QDs and originate from the misfit dislocations at the InN/GaN interface. Photoluminescence measurement at 4 K shows that the peak shifts to high energy with... (More)
- In this work, growth of InN quantum dots (QDs) on GaN nanowires (NWs) by metal-organic vapour phase epitaxy is demonstrated, illustrating the feasibility to combine 0D and 1D structures for nitride semiconductors. Selective area growth was used to generate arrays of c-oriented GaN NWs using Si3N4 as the mask material. In general, InN QDs tend to form at the NW edges between the m-plane side facets, but the QD growth can also be tuned to the side facets by controlling the growth temperature and the growth rate. TEM characterization reveals that I1-type stacking faults are formed in the QDs and originate from the misfit dislocations at the InN/GaN interface. Photoluminescence measurement at 4 K shows that the peak shifts to high energy with reduced dot size. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4962515
- author
- Bi, Zhaoxia
LU
; Lindgren, David
LU
; Johansson, Jonas
LU
; Ek, Martin
LU
; Wallenberg, Reine
LU
; Gustafsson, Anders
LU
; Borgström, Magnus
LU
; Ohlsson, Jonas
LU
; Monemar, Bo
LU
and Samuelson, Lars
LU
- organization
- publishing date
- 2014
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- quantum dots, nanowires, nitride, MOVPE
- in
- physica status solidi (c)
- volume
- 11
- pages
- 421 - 424
- publisher
- Wiley-Blackwell
- conference name
- 10th International Conference on Nitride Semiconductors (ICNS)
- conference dates
- 2013-08-25 - 2013-08-30
- external identifiers
-
- wos:000346071300013
- scopus:84898545201
- ISSN
- 1862-6351
- DOI
- 10.1002/pssc.201300551
- language
- English
- LU publication?
- yes
- id
- 87653414-ca52-4fdb-93e2-82c30c19e588 (old id 4962515)
- date added to LUP
- 2016-04-01 10:04:04
- date last changed
- 2024-10-10 07:37:08
@article{87653414-ca52-4fdb-93e2-82c30c19e588,
abstract = {{In this work, growth of InN quantum dots (QDs) on GaN nanowires (NWs) by metal-organic vapour phase epitaxy is demonstrated, illustrating the feasibility to combine 0D and 1D structures for nitride semiconductors. Selective area growth was used to generate arrays of c-oriented GaN NWs using Si3N4 as the mask material. In general, InN QDs tend to form at the NW edges between the m-plane side facets, but the QD growth can also be tuned to the side facets by controlling the growth temperature and the growth rate. TEM characterization reveals that I1-type stacking faults are formed in the QDs and originate from the misfit dislocations at the InN/GaN interface. Photoluminescence measurement at 4 K shows that the peak shifts to high energy with reduced dot size. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim}},
author = {{Bi, Zhaoxia and Lindgren, David and Johansson, Jonas and Ek, Martin and Wallenberg, Reine and Gustafsson, Anders and Borgström, Magnus and Ohlsson, Jonas and Monemar, Bo and Samuelson, Lars}},
issn = {{1862-6351}},
keywords = {{quantum dots; nanowires; nitride; MOVPE}},
language = {{eng}},
pages = {{421--424}},
publisher = {{Wiley-Blackwell}},
series = {{physica status solidi (c)}},
title = {{InN quantum dots on GaN nanowires grown by MOVPE}},
url = {{http://dx.doi.org/10.1002/pssc.201300551}},
doi = {{10.1002/pssc.201300551}},
volume = {{11}},
year = {{2014}},
}