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InN quantum dots on GaN nanowires grown by MOVPE

Bi, Zhaoxia LU orcid ; Lindgren, David LU ; Johansson, Jonas LU orcid ; Ek, Martin LU orcid ; Wallenberg, Reine LU ; Gustafsson, Anders LU orcid ; Borgström, Magnus LU ; Ohlsson, Jonas LU ; Monemar, Bo LU and Samuelson, Lars LU (2014) 10th International Conference on Nitride Semiconductors (ICNS) In physica status solidi (c) 11. p.421-424
Abstract
In this work, growth of InN quantum dots (QDs) on GaN nanowires (NWs) by metal-organic vapour phase epitaxy is demonstrated, illustrating the feasibility to combine 0D and 1D structures for nitride semiconductors. Selective area growth was used to generate arrays of c-oriented GaN NWs using Si3N4 as the mask material. In general, InN QDs tend to form at the NW edges between the m-plane side facets, but the QD growth can also be tuned to the side facets by controlling the growth temperature and the growth rate. TEM characterization reveals that I1-type stacking faults are formed in the QDs and originate from the misfit dislocations at the InN/GaN interface. Photoluminescence measurement at 4 K shows that the peak shifts to high energy with... (More)
In this work, growth of InN quantum dots (QDs) on GaN nanowires (NWs) by metal-organic vapour phase epitaxy is demonstrated, illustrating the feasibility to combine 0D and 1D structures for nitride semiconductors. Selective area growth was used to generate arrays of c-oriented GaN NWs using Si3N4 as the mask material. In general, InN QDs tend to form at the NW edges between the m-plane side facets, but the QD growth can also be tuned to the side facets by controlling the growth temperature and the growth rate. TEM characterization reveals that I1-type stacking faults are formed in the QDs and originate from the misfit dislocations at the InN/GaN interface. Photoluminescence measurement at 4 K shows that the peak shifts to high energy with reduced dot size. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim (Less)
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organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
quantum dots, nanowires, nitride, MOVPE
in
physica status solidi (c)
volume
11
pages
421 - 424
publisher
Wiley-Blackwell
conference name
10th International Conference on Nitride Semiconductors (ICNS)
conference dates
2013-08-25 - 2013-08-30
external identifiers
  • wos:000346071300013
  • scopus:84898545201
ISSN
1862-6351
DOI
10.1002/pssc.201300551
language
English
LU publication?
yes
id
87653414-ca52-4fdb-93e2-82c30c19e588 (old id 4962515)
date added to LUP
2016-04-01 10:04:04
date last changed
2023-10-29 14:04:13
@article{87653414-ca52-4fdb-93e2-82c30c19e588,
  abstract     = {{In this work, growth of InN quantum dots (QDs) on GaN nanowires (NWs) by metal-organic vapour phase epitaxy is demonstrated, illustrating the feasibility to combine 0D and 1D structures for nitride semiconductors. Selective area growth was used to generate arrays of c-oriented GaN NWs using Si3N4 as the mask material. In general, InN QDs tend to form at the NW edges between the m-plane side facets, but the QD growth can also be tuned to the side facets by controlling the growth temperature and the growth rate. TEM characterization reveals that I1-type stacking faults are formed in the QDs and originate from the misfit dislocations at the InN/GaN interface. Photoluminescence measurement at 4 K shows that the peak shifts to high energy with reduced dot size. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim}},
  author       = {{Bi, Zhaoxia and Lindgren, David and Johansson, Jonas and Ek, Martin and Wallenberg, Reine and Gustafsson, Anders and Borgström, Magnus and Ohlsson, Jonas and Monemar, Bo and Samuelson, Lars}},
  issn         = {{1862-6351}},
  keywords     = {{quantum dots; nanowires; nitride; MOVPE}},
  language     = {{eng}},
  pages        = {{421--424}},
  publisher    = {{Wiley-Blackwell}},
  series       = {{physica status solidi (c)}},
  title        = {{InN quantum dots on GaN nanowires grown by MOVPE}},
  url          = {{http://dx.doi.org/10.1002/pssc.201300551}},
  doi          = {{10.1002/pssc.201300551}},
  volume       = {{11}},
  year         = {{2014}},
}