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InN quantum dots on GaN nanowires grown by MOVPE

Bi, Zhaoxia LU ; Lindgren, David LU ; Johansson, Jonas LU ; Ek, Martin LU ; Wallenberg, Reine LU ; Gustafsson, Anders LU ; Borgström, Magnus LU ; Ohlsson, Jonas LU ; Monemar, Bo LU and Samuelson, Lars LU (2014) 10th International Conference on Nitride Semiconductors (ICNS) In Physica Status Solici C: Current Topics in Solid State Physics, Vol 11, No 3-4 11(3-4). p.421-424
Abstract
In this work, growth of InN quantum dots (QDs) on GaN nanowires (NWs) by metal-organic vapour phase epitaxy is demonstrated, illustrating the feasibility to combine 0D and 1D structures for nitride semiconductors. Selective area growth was used to generate arrays of c-oriented GaN NWs using Si3N4 as the mask material. In general, InN QDs tend to form at the NW edges between the m-plane side facets, but the QD growth can also be tuned to the side facets by controlling the growth temperature and the growth rate. TEM characterization reveals that I1-type stacking faults are formed in the QDs and originate from the misfit dislocations at the InN/GaN interface. Photoluminescence measurement at 4 K shows that the peak shifts to high energy with... (More)
In this work, growth of InN quantum dots (QDs) on GaN nanowires (NWs) by metal-organic vapour phase epitaxy is demonstrated, illustrating the feasibility to combine 0D and 1D structures for nitride semiconductors. Selective area growth was used to generate arrays of c-oriented GaN NWs using Si3N4 as the mask material. In general, InN QDs tend to form at the NW edges between the m-plane side facets, but the QD growth can also be tuned to the side facets by controlling the growth temperature and the growth rate. TEM characterization reveals that I1-type stacking faults are formed in the QDs and originate from the misfit dislocations at the InN/GaN interface. Photoluminescence measurement at 4 K shows that the peak shifts to high energy with reduced dot size. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
quantum dots, nanowires, nitride, MOVPE
in
Physica Status Solici C: Current Topics in Solid State Physics, Vol 11, No 3-4
volume
11
issue
3-4
pages
421 - 424
publisher
John Wiley & Sons
conference name
10th International Conference on Nitride Semiconductors (ICNS)
external identifiers
  • wos:000346071300013
  • scopus:84898545201
ISSN
1610-1642
1862-6351
DOI
10.1002/pssc.201300551
language
English
LU publication?
yes
id
87653414-ca52-4fdb-93e2-82c30c19e588 (old id 4962515)
date added to LUP
2015-01-28 16:53:44
date last changed
2017-08-20 03:04:59
@inproceedings{87653414-ca52-4fdb-93e2-82c30c19e588,
  abstract     = {In this work, growth of InN quantum dots (QDs) on GaN nanowires (NWs) by metal-organic vapour phase epitaxy is demonstrated, illustrating the feasibility to combine 0D and 1D structures for nitride semiconductors. Selective area growth was used to generate arrays of c-oriented GaN NWs using Si3N4 as the mask material. In general, InN QDs tend to form at the NW edges between the m-plane side facets, but the QD growth can also be tuned to the side facets by controlling the growth temperature and the growth rate. TEM characterization reveals that I1-type stacking faults are formed in the QDs and originate from the misfit dislocations at the InN/GaN interface. Photoluminescence measurement at 4 K shows that the peak shifts to high energy with reduced dot size. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim},
  author       = {Bi, Zhaoxia and Lindgren, David and Johansson, Jonas and Ek, Martin and Wallenberg, Reine and Gustafsson, Anders and Borgström, Magnus and Ohlsson, Jonas and Monemar, Bo and Samuelson, Lars},
  booktitle    = {Physica Status Solici C: Current Topics in Solid State Physics, Vol 11, No 3-4},
  issn         = {1610-1642},
  keyword      = {quantum dots,nanowires,nitride,MOVPE},
  language     = {eng},
  number       = {3-4},
  pages        = {421--424},
  publisher    = {John Wiley & Sons},
  title        = {InN quantum dots on GaN nanowires grown by MOVPE},
  url          = {http://dx.doi.org/10.1002/pssc.201300551},
  volume       = {11},
  year         = {2014},
}