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Sensor response and radiation damage effects for 3D pixels in the ATLAS IBL Detector

Aad, G. ; Åkesson, Torsten LU orcid ; Åstrand, Sten LU ; Doglioni, Caterina LU ; Ekman, Alexander LU ; Hedberg, Vincent LU ; Herde, Hannah LU orcid ; Konya, Balazs LU ; Lytken, Else LU orcid and Pöttgen, Ruth LU orcid , et al. (2024) In Journal of Instrumentation 19(10).
Abstract
Pixel sensors in 3D technology equip the outer ends of the staves of the Insertable B Layer (IBL), the innermost layer of the ATLAS Pixel Detector, which was installed before the start of LHC Run 2 in 2015. 3D pixel sensors are expected to exhibit more tolerance to radiation damage and are the technology of choice for the innermost layer in the ATLAS tracker upgrade for the HL-LHC programme. While the LHC has delivered an integrated luminosity of ≃ 235 fb−1 since the start of Run 2, the 3D sensors have received a non-ionising energy deposition corresponding to a fluence of ≃ 8.5 × 1014 1 MeV neutron-equivalent cm−2 averaged over the sensor area. This paper presents results of measurements of the 3D pixel sensors’ response during Run 2 and... (More)
Pixel sensors in 3D technology equip the outer ends of the staves of the Insertable B Layer (IBL), the innermost layer of the ATLAS Pixel Detector, which was installed before the start of LHC Run 2 in 2015. 3D pixel sensors are expected to exhibit more tolerance to radiation damage and are the technology of choice for the innermost layer in the ATLAS tracker upgrade for the HL-LHC programme. While the LHC has delivered an integrated luminosity of ≃ 235 fb−1 since the start of Run 2, the 3D sensors have received a non-ionising energy deposition corresponding to a fluence of ≃ 8.5 × 1014 1 MeV neutron-equivalent cm−2 averaged over the sensor area. This paper presents results of measurements of the 3D pixel sensors’ response during Run 2 and the first two years of Run 3, with predictions of its evolution until the end of Run 3 in 2025. Data are compared with radiation damage simulations, based on detailed maps of the electric field in the Si substrate, at various fluence levels and bias voltage values. These results illustrate the potential of 3D technology for pixel applications in high-radiation environments. © 2024 Institute of Physics. All rights reserved. (Less)
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type
Contribution to journal
publication status
published
subject
keywords
charge transport, Detector modelling and simulations II (electric fields, electron emission, etc); Particle tracking detectors (Solid-state detectors), multiplication and induction, pulse formation, Bosons, Hadrons, Photons, Silicon sensors, Solid-state sensors, Surface discharges, Detector modeling, Detector modeling and simulation II (electric field, Detector simulations, Etc);, Model and simulation, Multiplication and induction, Particle tracking, Particle tracking detector (solid-state detector), Pulse formation, Solid state detectors, Tracking detectors, Particle detectors
in
Journal of Instrumentation
volume
19
issue
10
article number
P10008
publisher
IOP Publishing
external identifiers
  • scopus:85206495952
ISSN
1748-0221
DOI
10.1088/1748-0221/19/10/P10008
language
English
LU publication?
yes
id
539c1eba-501d-460c-9092-3aa5233016c2
date added to LUP
2025-08-28 14:51:55
date last changed
2025-08-28 14:53:09
@article{539c1eba-501d-460c-9092-3aa5233016c2,
  abstract     = {{Pixel sensors in 3D technology equip the outer ends of the staves of the Insertable B Layer (IBL), the innermost layer of the ATLAS Pixel Detector, which was installed before the start of LHC Run 2 in 2015. 3D pixel sensors are expected to exhibit more tolerance to radiation damage and are the technology of choice for the innermost layer in the ATLAS tracker upgrade for the HL-LHC programme. While the LHC has delivered an integrated luminosity of ≃ 235 fb−1 since the start of Run 2, the 3D sensors have received a non-ionising energy deposition corresponding to a fluence of ≃ 8.5 × 1014 1 MeV neutron-equivalent cm−2 averaged over the sensor area. This paper presents results of measurements of the 3D pixel sensors’ response during Run 2 and the first two years of Run 3, with predictions of its evolution until the end of Run 3 in 2025. Data are compared with radiation damage simulations, based on detailed maps of the electric field in the Si substrate, at various fluence levels and bias voltage values. These results illustrate the potential of 3D technology for pixel applications in high-radiation environments. © 2024 Institute of Physics. All rights reserved.}},
  author       = {{Aad, G. and Åkesson, Torsten and Åstrand, Sten and Doglioni, Caterina and Ekman, Alexander and Hedberg, Vincent and Herde, Hannah and Konya, Balazs and Lytken, Else and Pöttgen, Ruth and Simpson, Nathan Daniel and Smirnova, Oxana and Wallin, Erik  Jakob and Zwalinski, L.}},
  issn         = {{1748-0221}},
  keywords     = {{charge transport; Detector modelling and simulations II (electric fields; electron emission; etc); Particle tracking detectors (Solid-state detectors); multiplication and induction; pulse formation; Bosons; Hadrons; Photons; Silicon sensors; Solid-state sensors; Surface discharges; Detector modeling; Detector modeling and simulation II (electric field; Detector simulations; Etc);; Model and simulation; Multiplication and induction; Particle tracking; Particle tracking detector (solid-state detector); Pulse formation; Solid state detectors; Tracking detectors; Particle detectors}},
  language     = {{eng}},
  number       = {{10}},
  publisher    = {{IOP Publishing}},
  series       = {{Journal of Instrumentation}},
  title        = {{Sensor response and radiation damage effects for 3D pixels in the ATLAS IBL Detector}},
  url          = {{http://dx.doi.org/10.1088/1748-0221/19/10/P10008}},
  doi          = {{10.1088/1748-0221/19/10/P10008}},
  volume       = {{19}},
  year         = {{2024}},
}