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a-plane GaN-based fully vertical FinFETs with normally-off operation

Garigapati, Navya Sri LU ; So, Byeongchan LU orcid ; Björk, Mikael LU ; Nawaz, Muhammad ; Darakchieva, Vanya LU and Lind, Erik LU orcid (2026) In Semiconductor Science and Technology 41(5).
Abstract

In this work, the electrical performance of fully vertical single-fin a-plane gallium nitride fin-based field-effect transistors (FinFETs) with short gate length (Lg≈ 200nm) and a drift-layer thickness of 4.3 µm is investigated. Device characteristics are evaluated over a temperature range from 25 °C to 150 °C for various fin widths. The FinFETs exhibit stable normally-off operation across the entire temperature range. For a device with a fin width of 100nm, a positive threshold voltage of 1.7 V is achieved and remains stable up to 150 °C. The same device demonstrates a specific on-resistance of 3 mΩ·cm2, a minimum subthreshold swing of 63mV dec−1, an ON/OFF current ratio of approximately 1010... (More)

In this work, the electrical performance of fully vertical single-fin a-plane gallium nitride fin-based field-effect transistors (FinFETs) with short gate length (Lg≈ 200nm) and a drift-layer thickness of 4.3 µm is investigated. Device characteristics are evaluated over a temperature range from 25 °C to 150 °C for various fin widths. The FinFETs exhibit stable normally-off operation across the entire temperature range. For a device with a fin width of 100nm, a positive threshold voltage of 1.7 V is achieved and remains stable up to 150 °C. The same device demonstrates a specific on-resistance of 3 mΩ·cm2, a minimum subthreshold swing of 63mV dec−1, an ON/OFF current ratio of approximately 1010 and a current density of 2.4kA cm−2 (133kA cm−2 when normalized to the single-fin active area, including current spreading in the drift layer). An increase in threshold voltage with temperature, particularly at 150 °C, is observed, indicating robust electrostatic control and favorable thermal stability for high-temperature power device operation.

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author
; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
fully vertical, gallium nitride, subthreshold swing, threshold voltage
in
Semiconductor Science and Technology
volume
41
issue
5
publisher
IOP Publishing
external identifiers
  • scopus:105037746338
ISSN
0268-1242
DOI
10.1088/1361-6641/ae6364
language
English
LU publication?
yes
id
5c164012-72d6-4ffc-8df8-901e9979c4d5
date added to LUP
2026-08-13 16:50:53
date last changed
2026-08-13 16:52:05
@article{5c164012-72d6-4ffc-8df8-901e9979c4d5,
  abstract     = {{<p>In this work, the electrical performance of fully vertical single-fin a-plane gallium nitride fin-based field-effect transistors (FinFETs) with short gate length (L<sub>g</sub>≈ 200nm) and a drift-layer thickness of 4.3 µm is investigated. Device characteristics are evaluated over a temperature range from 25 °C to 150 °C for various fin widths. The FinFETs exhibit stable normally-off operation across the entire temperature range. For a device with a fin width of 100nm, a positive threshold voltage of 1.7 V is achieved and remains stable up to 150 °C. The same device demonstrates a specific on-resistance of 3 mΩ·cm<sup>2</sup>, a minimum subthreshold swing of 63mV dec<sup>−1</sup>, an ON/OFF current ratio of approximately 10<sup>10</sup> and a current density of 2.4kA cm<sup>−2</sup> (133kA cm<sup>−2</sup> when normalized to the single-fin active area, including current spreading in the drift layer). An increase in threshold voltage with temperature, particularly at 150 °C, is observed, indicating robust electrostatic control and favorable thermal stability for high-temperature power device operation.</p>}},
  author       = {{Garigapati, Navya Sri and So, Byeongchan and Björk, Mikael and Nawaz, Muhammad and Darakchieva, Vanya and Lind, Erik}},
  issn         = {{0268-1242}},
  keywords     = {{fully vertical; gallium nitride; subthreshold swing; threshold voltage}},
  language     = {{eng}},
  number       = {{5}},
  publisher    = {{IOP Publishing}},
  series       = {{Semiconductor Science and Technology}},
  title        = {{a-plane GaN-based fully vertical FinFETs with normally-off operation}},
  url          = {{http://dx.doi.org/10.1088/1361-6641/ae6364}},
  doi          = {{10.1088/1361-6641/ae6364}},
  volume       = {{41}},
  year         = {{2026}},
}