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Hot Carrier Nanowire Transistors at the Ballistic Limit

Kumar, Mukesh LU ; Nowzari, Ali LU ; Persson, Axel R. LU orcid ; Jeppesen, Sören LU ; Wacker, Andreas LU orcid ; Bastard, Gerald ; Wallenberg, Reine L. LU ; Capasso, Federico ; Maisi, Ville F. LU and Samuelson, Lars LU (2024) In Nano Letters 24(26). p.7948-7952
Abstract

We demonstrate experimentally nonequilibrium transport in unipolar quasi-1D hot electron devices reaching the ballistic limit at room temperature. The devices are realized with heterostructure engineering in nanowires to obtain dopant- and dislocation-free 1D-epitaxy and flexible bandgap engineering. We show experimentally the control of hot electron injection with a graded conduction band profile and the subsequent filtering of hot and relaxed electrons with rectangular energy barriers. The number of electrons passing the barrier depends exponentially on the transport length with a mean-free path of 200-260 nm, and the electrons reach the ballistic transport regime for the shortest devices with 70% of the electrons flying freely... (More)

We demonstrate experimentally nonequilibrium transport in unipolar quasi-1D hot electron devices reaching the ballistic limit at room temperature. The devices are realized with heterostructure engineering in nanowires to obtain dopant- and dislocation-free 1D-epitaxy and flexible bandgap engineering. We show experimentally the control of hot electron injection with a graded conduction band profile and the subsequent filtering of hot and relaxed electrons with rectangular energy barriers. The number of electrons passing the barrier depends exponentially on the transport length with a mean-free path of 200-260 nm, and the electrons reach the ballistic transport regime for the shortest devices with 70% of the electrons flying freely through the base electrode and the barrier reflections limiting the transport to the collector.

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author
; ; ; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
ballistic electrons, bandgap engineering, hot carrier transistors, quantum mechanical transmission
in
Nano Letters
volume
24
issue
26
pages
5 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • pmid:38912704
  • scopus:85196862227
ISSN
1530-6984
DOI
10.1021/acs.nanolett.4c01197
language
English
LU publication?
yes
id
7779bc8c-f902-40f2-956a-c8d2a1d8b22d
date added to LUP
2024-08-30 14:20:20
date last changed
2025-06-21 17:39:35
@article{7779bc8c-f902-40f2-956a-c8d2a1d8b22d,
  abstract     = {{<p>We demonstrate experimentally nonequilibrium transport in unipolar quasi-1D hot electron devices reaching the ballistic limit at room temperature. The devices are realized with heterostructure engineering in nanowires to obtain dopant- and dislocation-free 1D-epitaxy and flexible bandgap engineering. We show experimentally the control of hot electron injection with a graded conduction band profile and the subsequent filtering of hot and relaxed electrons with rectangular energy barriers. The number of electrons passing the barrier depends exponentially on the transport length with a mean-free path of 200-260 nm, and the electrons reach the ballistic transport regime for the shortest devices with 70% of the electrons flying freely through the base electrode and the barrier reflections limiting the transport to the collector.</p>}},
  author       = {{Kumar, Mukesh and Nowzari, Ali and Persson, Axel R. and Jeppesen, Sören and Wacker, Andreas and Bastard, Gerald and Wallenberg, Reine L. and Capasso, Federico and Maisi, Ville F. and Samuelson, Lars}},
  issn         = {{1530-6984}},
  keywords     = {{ballistic electrons; bandgap engineering; hot carrier transistors; quantum mechanical transmission}},
  language     = {{eng}},
  month        = {{07}},
  number       = {{26}},
  pages        = {{7948--7952}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Nano Letters}},
  title        = {{Hot Carrier Nanowire Transistors at the Ballistic Limit}},
  url          = {{http://dx.doi.org/10.1021/acs.nanolett.4c01197}},
  doi          = {{10.1021/acs.nanolett.4c01197}},
  volume       = {{24}},
  year         = {{2024}},
}