Advanced

III-V Nanowire Complementary Metal-Oxide Semiconductor Transistors Monolithically Integrated on Si

Svensson, Johannes LU ; Dey, Anil LU ; Jacobsson, Daniel LU and Wernersson, Lars-Erik LU (2015) In Nano Letters 15(12). p.7898-7904
Abstract
III-V semiconductors have attractive transport properties suitable for low-power, high-speed complementary metal oxide-semiconductor (CMOS) implementation, but major challenges related to cointegration of III-V n- and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) on low-cost Si substrates have so far hindered their use for large scale logic circuits. By using a novel approach to grow both InAs and InAs/GaSb vertical nanowires of equal length simultaneously in one single growth step, we here demonstrate n- and p-type III-V MOSFETs monolithically integrated on a Si substrate with high I-on/I-off ratios using a dual channel, single gate-stack design processed simultaneously for both types of transistors. In addition, we... (More)
III-V semiconductors have attractive transport properties suitable for low-power, high-speed complementary metal oxide-semiconductor (CMOS) implementation, but major challenges related to cointegration of III-V n- and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) on low-cost Si substrates have so far hindered their use for large scale logic circuits. By using a novel approach to grow both InAs and InAs/GaSb vertical nanowires of equal length simultaneously in one single growth step, we here demonstrate n- and p-type III-V MOSFETs monolithically integrated on a Si substrate with high I-on/I-off ratios using a dual channel, single gate-stack design processed simultaneously for both types of transistors. In addition, we demonstrate fundamental CMOS logic gates, such as inverters and NAND gates, which illustrate the viability of our approach for large scale III-V MOSFET circuits on Si. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
III-V, CMOS, nanowire, inverter, NAND, InAs, GaSb, low-power logic, Si
in
Nano Letters
volume
15
issue
12
pages
7898 - 7904
publisher
The American Chemical Society
external identifiers
  • wos:000366339600018
  • scopus:84949643721
ISSN
1530-6992
DOI
10.1021/acs.nanolett.5b02936
language
English
LU publication?
yes
id
1cdb040f-9139-4d04-aeb1-53265652aa99 (old id 8551727)
date added to LUP
2016-01-27 12:51:21
date last changed
2017-11-12 03:47:06
@article{1cdb040f-9139-4d04-aeb1-53265652aa99,
  abstract     = {III-V semiconductors have attractive transport properties suitable for low-power, high-speed complementary metal oxide-semiconductor (CMOS) implementation, but major challenges related to cointegration of III-V n- and p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) on low-cost Si substrates have so far hindered their use for large scale logic circuits. By using a novel approach to grow both InAs and InAs/GaSb vertical nanowires of equal length simultaneously in one single growth step, we here demonstrate n- and p-type III-V MOSFETs monolithically integrated on a Si substrate with high I-on/I-off ratios using a dual channel, single gate-stack design processed simultaneously for both types of transistors. In addition, we demonstrate fundamental CMOS logic gates, such as inverters and NAND gates, which illustrate the viability of our approach for large scale III-V MOSFET circuits on Si.},
  author       = {Svensson, Johannes and Dey, Anil and Jacobsson, Daniel and Wernersson, Lars-Erik},
  issn         = {1530-6992},
  keyword      = {III-V,CMOS,nanowire,inverter,NAND,InAs,GaSb,low-power logic,Si},
  language     = {eng},
  number       = {12},
  pages        = {7898--7904},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {III-V Nanowire Complementary Metal-Oxide Semiconductor Transistors Monolithically Integrated on Si},
  url          = {http://dx.doi.org/10.1021/acs.nanolett.5b02936},
  volume       = {15},
  year         = {2015},
}