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Ballistic modeling of InAs nanowire transistors

Jansson, Kristofer LU ; Lind, Erik LU and Wernersson, Lars-Erik LU (2016) In Solid-State Electronics 115. p.47-53
Abstract
In this work, the intrinsic performance of InAs nanowire transistors is evaluated in the ballistic limit. A self-consistent Schrodinger-Poisson solver is utilized in the cylindrical geometry, while accounting for conduction band non-parabolicity. The transistor characteristics are derived from simulations of ballistic transport within the nanowire. Using this approach, the performance is calculated for a continuous range of nanowire diameters and the transport properties are mapped. A transconductance exceeding 4 S/mm is predicted at a gate overdrive of 0.5 V and it is shown that the performance is improved with scaling. Furthermore, the influence from including self-consistency and non-parabolicity in the band structure simulations is... (More)
In this work, the intrinsic performance of InAs nanowire transistors is evaluated in the ballistic limit. A self-consistent Schrodinger-Poisson solver is utilized in the cylindrical geometry, while accounting for conduction band non-parabolicity. The transistor characteristics are derived from simulations of ballistic transport within the nanowire. Using this approach, the performance is calculated for a continuous range of nanowire diameters and the transport properties are mapped. A transconductance exceeding 4 S/mm is predicted at a gate overdrive of 0.5 V and it is shown that the performance is improved with scaling. Furthermore, the influence from including self-consistency and non-parabolicity in the band structure simulations is quantified. It is demonstrated that the effective mass approximation underestimates the transistor performance due to the highly non-parabolic conduction band in InAs. Neglecting self-consistency severely overestimates the device performance, especially for thick nanowires. The error introduced by both of these approximations gets increasingly worse under high bias conditions. (C) 2015 Elsevier Ltd. All rights reserved. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Nanowire, MOSFET, InAs, Ballistic, Modeling
in
Solid-State Electronics
volume
115
pages
47 - 53
publisher
Elsevier
external identifiers
  • wos:000365614300008
  • scopus:84946615271
ISSN
0038-1101
DOI
10.1016/j.sse.2015.10.009
language
English
LU publication?
yes
id
cfa16ff7-550e-4b76-95ba-3093af350002 (old id 8560162)
date added to LUP
2016-01-26 09:26:08
date last changed
2017-01-01 03:47:39
@article{cfa16ff7-550e-4b76-95ba-3093af350002,
  abstract     = {In this work, the intrinsic performance of InAs nanowire transistors is evaluated in the ballistic limit. A self-consistent Schrodinger-Poisson solver is utilized in the cylindrical geometry, while accounting for conduction band non-parabolicity. The transistor characteristics are derived from simulations of ballistic transport within the nanowire. Using this approach, the performance is calculated for a continuous range of nanowire diameters and the transport properties are mapped. A transconductance exceeding 4 S/mm is predicted at a gate overdrive of 0.5 V and it is shown that the performance is improved with scaling. Furthermore, the influence from including self-consistency and non-parabolicity in the band structure simulations is quantified. It is demonstrated that the effective mass approximation underestimates the transistor performance due to the highly non-parabolic conduction band in InAs. Neglecting self-consistency severely overestimates the device performance, especially for thick nanowires. The error introduced by both of these approximations gets increasingly worse under high bias conditions. (C) 2015 Elsevier Ltd. All rights reserved.},
  author       = {Jansson, Kristofer and Lind, Erik and Wernersson, Lars-Erik},
  issn         = {0038-1101},
  keyword      = {Nanowire,MOSFET,InAs,Ballistic,Modeling},
  language     = {eng},
  pages        = {47--53},
  publisher    = {Elsevier},
  series       = {Solid-State Electronics},
  title        = {Ballistic modeling of InAs nanowire transistors},
  url          = {http://dx.doi.org/10.1016/j.sse.2015.10.009},
  volume       = {115},
  year         = {2016},
}