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Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs

Persson, Axel R. ; Gustafsson, Anders LU orcid ; Bi, Zhaoxia LU orcid ; Samuelson, Lars LU ; Darakchieva, Vanya LU and Persson, Per O.Å. (2023) In Applied Physics Letters 123(2).
Abstract

Structural defects are detrimental
to the efficiency and quality of optoelectronic semiconductor devices.
In this work, we study InGaN platelets with a quantum well structure
intended for nano-LEDs emitting red light and how their optical
properties, measured with cathodoluminescence, relate to the
corresponding atomic structure. Through a method of
spectroscopy-thinning-imaging, we demonstrate in plan-view how stacking
mismatch boundaries intersect the quantum well in a pattern correlated
with the observed diminished cathodoluminescence intensity. The results
highlight the importance of avoiding stacking mismatch in small LED
structures due to the relatively large region of... (More)

Structural defects are detrimental
to the efficiency and quality of optoelectronic semiconductor devices.
In this work, we study InGaN platelets with a quantum well structure
intended for nano-LEDs emitting red light and how their optical
properties, measured with cathodoluminescence, relate to the
corresponding atomic structure. Through a method of
spectroscopy-thinning-imaging, we demonstrate in plan-view how stacking
mismatch boundaries intersect the quantum well in a pattern correlated
with the observed diminished cathodoluminescence intensity. The results
highlight the importance of avoiding stacking mismatch in small LED
structures due to the relatively large region of non-radiative
recombination caused by the mismatch boundaries.

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Please use this url to cite or link to this publication:
author
; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
123
issue
2
article number
022103
publisher
American Institute of Physics (AIP)
external identifiers
  • scopus:85165375257
ISSN
0003-6951
DOI
10.1063/5.0150863
language
English
LU publication?
yes
id
8dd64098-f433-41b3-b0fb-57d02c85dea0
date added to LUP
2023-09-05 15:23:30
date last changed
2023-11-08 10:59:17
@article{8dd64098-f433-41b3-b0fb-57d02c85dea0,
  abstract     = {{<p>Structural defects are detrimental<br>
 to the efficiency and quality of optoelectronic semiconductor devices. <br>
In this work, we study InGaN platelets with a quantum well structure <br>
intended for nano-LEDs emitting red light and how their optical <br>
properties, measured with cathodoluminescence, relate to the <br>
corresponding atomic structure. Through a method of <br>
spectroscopy-thinning-imaging, we demonstrate in plan-view how stacking <br>
mismatch boundaries intersect the quantum well in a pattern correlated <br>
with the observed diminished cathodoluminescence intensity. The results <br>
highlight the importance of avoiding stacking mismatch in small LED <br>
structures due to the relatively large region of non-radiative <br>
recombination caused by the mismatch boundaries. </p>}},
  author       = {{Persson, Axel R. and Gustafsson, Anders and Bi, Zhaoxia and Samuelson, Lars and Darakchieva, Vanya and Persson, Per O.Å.}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  number       = {{2}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs}},
  url          = {{http://dx.doi.org/10.1063/5.0150863}},
  doi          = {{10.1063/5.0150863}},
  volume       = {{123}},
  year         = {{2023}},
}