2DEG Properties of AlScN/GaN and AlYN/GaN HEMTs Determined by Terahertz Optical Hall Effect
Stanishev, Vallery LU
; Streicher, I.
; Papamichail, Alexis
; Rindert, Viktor
LU
; Paskov, Plamen P.
; Leone, S.
and Darakchieva, Vanya
LU
(2025)
In Frontiers in Electronic Materials
5.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/9cfc89a4-a47c-4df0-bc74-687079fad879
- author
- Stanishev, Vallery
LU
; Streicher, I.
; Papamichail, Alexis
; Rindert, Viktor
LU
; Paskov, Plamen P.
; Leone, S.
and Darakchieva, Vanya
LU
- organization
- publishing date
- 2025
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Frontiers in Electronic Materials
- volume
- 5
- pages
- 9 pages
- DOI
- 10.3389/femat.2025.1622176
- language
- English
- LU publication?
- yes
- id
- 9cfc89a4-a47c-4df0-bc74-687079fad879
- date added to LUP
- 2026-02-19 15:02:51
- date last changed
- 2026-02-24 09:42:28
@article{9cfc89a4-a47c-4df0-bc74-687079fad879,
author = {{Stanishev, Vallery and Streicher, I. and Papamichail, Alexis and Rindert, Viktor and Paskov, Plamen P. and Leone, S. and Darakchieva, Vanya}},
language = {{eng}},
series = {{Frontiers in Electronic Materials}},
title = {{2DEG Properties of AlScN/GaN and AlYN/GaN HEMTs Determined by Terahertz Optical Hall Effect}},
url = {{http://dx.doi.org/10.3389/femat.2025.1622176}},
doi = {{10.3389/femat.2025.1622176}},
volume = {{5}},
year = {{2025}},
}