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Interface composition of InAs nanowires with Al2O2 and HfO2 thin films

Timm, Rainer LU orcid ; Hjort, Martin LU orcid ; Fian, Alexander ; Borg, Mattias LU orcid ; Thelander, Claes LU ; Andersen, Jesper N LU ; Wernersson, Lars-Erik LU and Mikkelsen, Anders LU (2011) In Applied Physics Letters 99(22). p.1-222907
Abstract
Abstract in Undetermined
Vertical InAs nanowires (NWs) wrapped by a thin high-kappa dielectric layer may be a key to the next generation of high-speed metal-oxide-semiconductor devices. Here, we have investigated the structure and chemical composition of the interface between InAs NWs and 2 nm thick Al(2)O(3) and HfO(2) films. The native oxide on the NWs is significantly reduced upon high-kappa deposition, although less effective than for corresponding planar samples, resulting in a 0.8 nm thick interface layer with an In-/As-oxide composition of about 0.7/0.3. The exact oxide reduction and composition including As-suboxides and the role of the NW geometry are discussed in detail.
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author
; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
high-k dielectric thin films, alumina, hafnium compounds, indium, compounds, interface phenomena, nanostructured materials, nanowires, semiconductor materials
in
Applied Physics Letters
volume
99
issue
22
pages
1 - 222907
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000298244500062
  • scopus:82955194686
ISSN
0003-6951
DOI
10.1063/1.3664399
language
English
LU publication?
yes
id
ab04035b-d526-49c3-8bbd-5105128d5ccb (old id 2255861)
date added to LUP
2016-04-01 10:38:23
date last changed
2023-11-10 01:26:37
@article{ab04035b-d526-49c3-8bbd-5105128d5ccb,
  abstract     = {{Abstract in Undetermined<br/>Vertical InAs nanowires (NWs) wrapped by a thin high-kappa dielectric layer may be a key to the next generation of high-speed metal-oxide-semiconductor devices. Here, we have investigated the structure and chemical composition of the interface between InAs NWs and 2 nm thick Al(2)O(3) and HfO(2) films. The native oxide on the NWs is significantly reduced upon high-kappa deposition, although less effective than for corresponding planar samples, resulting in a 0.8 nm thick interface layer with an In-/As-oxide composition of about 0.7/0.3. The exact oxide reduction and composition including As-suboxides and the role of the NW geometry are discussed in detail.}},
  author       = {{Timm, Rainer and Hjort, Martin and Fian, Alexander and Borg, Mattias and Thelander, Claes and Andersen, Jesper N and Wernersson, Lars-Erik and Mikkelsen, Anders}},
  issn         = {{0003-6951}},
  keywords     = {{high-k dielectric thin films; alumina; hafnium compounds; indium; compounds; interface phenomena; nanostructured materials; nanowires; semiconductor materials}},
  language     = {{eng}},
  number       = {{22}},
  pages        = {{1--222907}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Interface composition of InAs nanowires with Al2O2 and HfO2 thin films}},
  url          = {{http://dx.doi.org/10.1063/1.3664399}},
  doi          = {{10.1063/1.3664399}},
  volume       = {{99}},
  year         = {{2011}},
}