Realization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed Templates for Red Micro-LEDs
(2020) In ACS Applied Materials and Interfaces 12(15). p.17845-17851- Abstract
In this work, arrays of predominantly relaxed InGaN platelets with indium contents of up to 18%, free from dislocations and offering a smooth top c-plane, are presented. The InGaN platelets are grown by metal-organic vapor phase epitaxy on a dome-like InGaN surface formed by chemical mechanical polishing of InGaN pyramids defined by 6 equivalent {101¯ 1} planes. The dome-like surface is flattened during growth, through the formation of bunched steps, which are terminated when reaching the inclined {101¯ 1} planes. The continued growth takes place on the flattened top c-plane with single bilayer surface steps initiated at the six corners between the c-plane and the inclined {101¯ 1} planes, leading to the... (More)
In this work, arrays of predominantly relaxed InGaN platelets with indium contents of up to 18%, free from dislocations and offering a smooth top c-plane, are presented. The InGaN platelets are grown by metal-organic vapor phase epitaxy on a dome-like InGaN surface formed by chemical mechanical polishing of InGaN pyramids defined by 6 equivalent {101¯ 1} planes. The dome-like surface is flattened during growth, through the formation of bunched steps, which are terminated when reaching the inclined {101¯ 1} planes. The continued growth takes place on the flattened top c-plane with single bilayer surface steps initiated at the six corners between the c-plane and the inclined {101¯ 1} planes, leading to the formation of high-quality InGaN layers. The top c-plane of the as-formed InGaN platelets can be used as a high-quality template for red micro light-emitting diodes.
(Less)
- author
- organization
- publishing date
- 2020
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- chemical mechanical polishing, InGaN, micro-LEDs, selective area growth, template, vapor phase epitaxy
- in
- ACS Applied Materials and Interfaces
- volume
- 12
- issue
- 15
- pages
- 7 pages
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- scopus:85083544214
- pmid:32207292
- ISSN
- 1944-8244
- DOI
- 10.1021/acsami.0c00951
- language
- English
- LU publication?
- yes
- id
- b8326caf-9dee-455a-a44b-464284ca375f
- date added to LUP
- 2021-01-12 13:56:25
- date last changed
- 2024-09-05 12:38:58
@article{b8326caf-9dee-455a-a44b-464284ca375f, abstract = {{<p>In this work, arrays of predominantly relaxed InGaN platelets with indium contents of up to 18%, free from dislocations and offering a smooth top c-plane, are presented. The InGaN platelets are grown by metal-organic vapor phase epitaxy on a dome-like InGaN surface formed by chemical mechanical polishing of InGaN pyramids defined by 6 equivalent {101&macr; 1} planes. The dome-like surface is flattened during growth, through the formation of bunched steps, which are terminated when reaching the inclined {101&macr; 1} planes. The continued growth takes place on the flattened top c-plane with single bilayer surface steps initiated at the six corners between the c-plane and the inclined {101&macr; 1} planes, leading to the formation of high-quality InGaN layers. The top c-plane of the as-formed InGaN platelets can be used as a high-quality template for red micro light-emitting diodes.</p>}}, author = {{Bi, Zhaoxia and Lu, Taiping and Colvin, Jovana and Sjögren, Elis and Vainorius, Neimantas and Gustafsson, Anders and Johansson, Jonas and Timm, Rainer and Lenrick, Filip and Wallenberg, Reine and Monemar, Bo and Samuelson, Lars}}, issn = {{1944-8244}}, keywords = {{chemical mechanical polishing; InGaN; micro-LEDs; selective area growth; template; vapor phase epitaxy}}, language = {{eng}}, number = {{15}}, pages = {{17845--17851}}, publisher = {{The American Chemical Society (ACS)}}, series = {{ACS Applied Materials and Interfaces}}, title = {{Realization of Ultrahigh Quality InGaN Platelets to be Used as Relaxed Templates for Red Micro-LEDs}}, url = {{http://dx.doi.org/10.1021/acsami.0c00951}}, doi = {{10.1021/acsami.0c00951}}, volume = {{12}}, year = {{2020}}, }