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High-frequency InGaAs tri-gate MOSFETs with fmax of 400 GHz

Zota, C. B. LU ; Lindelöw, F. LU ; Wernersson, L. E. LU and Lind, E. LU (2016) In Electronics Letters 52(22). p.1869-1871
Abstract

Extremely scaled down tri-gate RF metal-oxide-semiconductor field-effect transistors (MOSFETs) utilising lateral nanowires as the channel, with gate length and nanowire width both of 20 nm are reported. These devices exhibit simultaneous extrapolated ft and fmax of 275 and 400 GHz at VDS = 0.5 V, which is the largest combined ft and fmax, as well as the largest fmax reported for all III-V MOSFETs.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Electronics Letters
volume
52
issue
22
pages
3 pages
publisher
IEE
external identifiers
  • scopus:84992187072
  • wos:000385998000027
ISSN
0013-5194
DOI
10.1049/el.2016.3108
language
English
LU publication?
yes
id
bc709aa2-3206-40ee-a555-ae9a7ded72be
date added to LUP
2016-11-08 08:19:13
date last changed
2017-11-12 04:25:55
@article{bc709aa2-3206-40ee-a555-ae9a7ded72be,
  abstract     = {<p>Extremely scaled down tri-gate RF metal-oxide-semiconductor field-effect transistors (MOSFETs) utilising lateral nanowires as the channel, with gate length and nanowire width both of 20 nm are reported. These devices exhibit simultaneous extrapolated f<sub>t</sub> and f<sub>max</sub> of 275 and 400 GHz at V<sub>DS</sub> = 0.5 V, which is the largest combined f<sub>t</sub> and f<sub>max</sub>, as well as the largest f<sub>max</sub> reported for all III-V MOSFETs.</p>},
  author       = {Zota, C. B. and Lindelöw, F. and Wernersson, L. E. and Lind, E.},
  issn         = {0013-5194},
  language     = {eng},
  month        = {10},
  number       = {22},
  pages        = {1869--1871},
  publisher    = {IEE},
  series       = {Electronics Letters},
  title        = {High-frequency InGaAs tri-gate MOSFETs with f<sub>max</sub> of 400 GHz},
  url          = {http://dx.doi.org/10.1049/el.2016.3108},
  volume       = {52},
  year         = {2016},
}