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- 2010
-
Mark
III-V Nanowires-Extending a Narrowing Road
(
- Contribution to journal › Article
-
Mark
Temperature dependent properties of InSb and InAs nanowire field-effect transistors
(
- Contribution to journal › Article
-
Mark
Vertical InAs nanowire wrap gate transistors for integration on a Si platform
2010) GigaHertz Symposium, 2010(
- Contribution to conference › Paper, not in proceeding
-
Mark
InAs/GaSb heterostructure nanowires for tunnel FETs
2010) 15th international conference on metal organic vapor phase epitaxy, 2010(
- Contribution to conference › Paper, not in proceeding
- 2009
-
Mark
Giant, level-dependent g factors in InSb nanowire quantum dots.
(
- Contribution to journal › Article
-
Mark
Deposition of HfO2 on InAs by atomic-layer deposition
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Fabrication Tehnology for RF Cirquit Implementation of Vertical III-V MOSFETs
2009) Swedish System-on-Chip Conference, SSoCC '09(
- Contribution to conference › Abstract
- 2008
-
Mark
Vertical InAs Nanowire Wrap Gate Transistors on Si Substrates
(
- Contribution to journal › Article
-
Mark
Drive current and threshold voltage control in vertical InAs wrap-gate transistors
(
- Contribution to journal › Article
-
Mark
Vertical enhancement-mode InAs nanowire field-effect transistor with 50-nm wrap gate
(
- Contribution to journal › Article