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- 2011
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Mark
Electron Image Series Reconstruction of Twin Interfaces in InP Superlattice Nanowires.
(
- Contribution to journal › Article
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Mark
Growth of doped InAsyP1-y nanowires with InP shells
(
- Contribution to journal › Article
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Mark
Unit cell parameters of wurtzite InP nanowires determined by x-ray diffraction
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- Contribution to journal › Article
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Mark
InAs quantum dots and quantum wells grown on stacking-fault controlled InP nanowires with wurtzite crystal structure
(
- Contribution to journal › Article
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Mark
Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88(4). p.444-447(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
15 nm diameter InAs nanowire MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Gate-Induced Fermi Level Tuning in InP Nanowires at Efficiency Close to the Thermal Limit.
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- Contribution to journal › Article
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Mark
Axial InP Nanowire Tandem Junction Grown on a Silicon Substrate
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- Contribution to journal › Article
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Mark
Dual-gate induced InP nanowire diode
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Photovoltaics with piezoelectric core-shell nanowires
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding