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- 2004
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Mark
Direct atomically resolved imaging inside a nanowire
2004) Intl Conf on Scanning Probe Microscopy, Sensors and Nanostruct, Beijing, China (2004)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Influence of the spacer layer distance in stacked InAs/InP quantum dots, studied by cross-sectional scanning tunneling microscopy
2004) 8th International Conference on Nanometer-Scale Science and Technology, 2004(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Nanowire arrays - a toolbox for the future
2004) 8th International Conference on Nanometer-Scale Science and Technology, 2004(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2003
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Mark
Spontaneous InAs quantum dot nucleation at strained InP/GaInAs interfaces
(
- Contribution to journal › Article
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Mark
Arrays of Ge islands on Si(001) grown by means of electron-beam pre-patterning
(
- Contribution to journal › Article
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Mark
Fabrication of individually seeded nanowire arrays by vapour-liquid-solid growth
(
- Contribution to journal › Article
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Mark
Transport through an isolated artificial molecule formed from stacked self-assembled quantum dots
(
- Contribution to journal › Article
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Mark
Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
(
- Contribution to journal › Article
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Mark
Strain in GaP/GaAs and GaAs/GaP resonant tunnelling heterostructures
(
- Contribution to journal › Article
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Mark
Quadruples of Ge dots grown on patterned Si surfaces
(
- Contribution to journal › Article