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- 2024
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Mark
Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect
(
- Contribution to journal › Article
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Mark
Bloch equations in terahertz magnetic-resonance ellipsometry
(
- Contribution to journal › Article
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Mark
High-field/high-frequency electron spin resonances of Fe-doped β-Ga2 O3 by terahertz generalized ellipsometry : Monoclinic symmetry effects
(
- Contribution to journal › Article
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Mark
Controlling the broadband enhanced light chirality with L-shaped dielectric metamaterials
(
- Contribution to journal › Article
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Mark
Electron effective mass in GaN revisited : New insights from terahertz and mid-infrared optical Hall effect
(
- Contribution to journal › Article
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Mark
High crystalline quality homoepitaxial Si-doped β-Ga2O3(010) layers with reduced structural anisotropy grown by hot-wall MOCVD
(
- Contribution to journal › Article
- 2023
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Mark
Room temperature two-dimensional electron gas scattering time, effective mass, and mobility parameters in AlxGa1−xN/GaN heterostructures (0.07 ≤ x ≤ 0.42)
(
- Contribution to journal › Article
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Mark
The Role of Optical Phonon Confinement in the Infrared Dielectric Response of III–V Superlattices
2023) In Advanced Materials(
- Contribution to journal › Article
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Mark
THz Spectroscopic Electron Paramagnetic Resonance of the Fe3+Defect in GaN
2023) 48th International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2023 In International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding