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- 2012
-
Mark
Electrical Properties of Top-gate GaSb/InAs Core/Shell Nanowire Field Effect Transistor
2012) ICPS 2012(
- Contribution to conference › Abstract
-
Mark
Current Modulation in GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
2012) ICPS 2012(
- Contribution to conference › Abstract
-
Mark
Electrical Properties of n- and p-doped GaSb-InAsSb Nanowire Interband Tunnel Diodes
2012) MRS Fall Meeting, 2012(
- Contribution to conference › Abstract
- 2011
-
Mark
Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study
(
- Contribution to journal › Article
- 2010
-
Mark
Correlation-induced conductance suppression at level degeneracy in a quantum dot.
(
- Contribution to journal › Article
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Mark
High-k oxides on (100), (111)A and (111)B InAs substrates
2010) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials(
- Contribution to conference › Paper, not in proceeding
-
Mark
InAs/GaSb heterostructure nanowires for tunnel FETs
2010) 15th international conference on metal organic vapor phase epitaxy, 2010(
- Contribution to conference › Paper, not in proceeding
-
Mark
Analysis of InAs/HfO2 nanowire CV characteristics
2010) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials(
- Contribution to conference › Paper, not in proceeding
- 2008
-
Mark
Analysing the capacitance–voltage measurements of vertical wrapped-gated nanowires
(
- Contribution to journal › Article