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- 2011
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Mark
Wurtzite-zincblende superlattices in InAs nanowires using a supply interruption method.
(
- Contribution to journal › Article
- 2010
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Mark
Control of III-V nanowire crystal structure by growth parameter tuning
(
- Contribution to journal › Article
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Mark
Doping Incorporation in InAs nanowires characterized by capacitance measurements
(
- Contribution to journal › Article
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Mark
The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors.
(
- Contribution to journal › Article
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Mark
Crystal Phase Engineering in Single InAs Nanowires.
(
- Contribution to journal › Article
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Mark
Correlation-induced conductance suppression at level degeneracy in a quantum dot.
(
- Contribution to journal › Article
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Mark
Diameter Dependence of the Wurtzite-Zinc Blende Transition in InAs Nanowires
(
- Contribution to journal › Article
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Mark
Temperature dependent properties of InSb and InAs nanowire field-effect transistors
(
- Contribution to journal › Article
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Mark
Wurtzite-Zinc blende transition in InAs nanowires
2010) 15th international conference on metal organic vapor phase epitaxy, 2010(
- Contribution to conference › Paper, not in proceeding
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Mark
InAs/GaSb heterostructure nanowires for tunnel FETs
2010) 15th international conference on metal organic vapor phase epitaxy, 2010(
- Contribution to conference › Paper, not in proceeding