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- 2010
-
Mark
InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors.
(
- Contribution to journal › Article
-
Mark
High Frequency Performance of Vertical InAs Nanowire MOSFET
2010) 22nd International Conference on Indium Phosphide and Related Materials(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
InAs/GaSb heterostructure nanowires for tunnel FETs
2010) 15th international conference on metal organic vapor phase epitaxy, 2010(
- Contribution to conference › Paper, not in proceeding
-
Mark
Vertical InAs nanowire wrap gate transistors for integration on a Si platform
2010) GigaHertz Symposium, 2010(
- Contribution to conference › Paper, not in proceeding
- 2009
-
Mark
Deposition of HfO2 on InAs by atomic-layer deposition
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Fabrication Tehnology for RF Cirquit Implementation of Vertical III-V MOSFETs
2009) Swedish System-on-Chip Conference, SSoCC '09(
- Contribution to conference › Abstract
-
Mark
Giant, level-dependent g factors in InSb nanowire quantum dots.
(
- Contribution to journal › Article
- 2008
-
Mark
Vertical enhancement-mode InAs nanowire field-effect transistor with 50-nm wrap gate
(
- Contribution to journal › Article
-
Mark
Heterostructure Barriers in Wrap Gated Nanowire FETs
(
- Contribution to journal › Article
-
Mark
Drive current and threshold voltage control in vertical InAs wrap-gate transistors
(
- Contribution to journal › Article
-
Mark
Vertical InAs Nanowire Wrap Gate Transistors on Si Substrates
(
- Contribution to journal › Article
- 2006
-
Mark
Vertical InAs nanowire wrap-gate FETs
2006) Semiconductor Nanowires Symposium, 2006(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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