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- 2010
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Mark
Doping Incorporation in InAs nanowires characterized by capacitance measurements
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- Contribution to journal › Article
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Mark
Determination of diffusion lengths in nanowires using cathodoluminescence
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- Contribution to journal › Article
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Mark
Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching
(
- Contribution to journal › Article
- 2009
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Mark
Investigation of electron wave function hybridization in Ga0.25In0.75As/InP arrays
(
- Contribution to journal › Article
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Mark
X-ray measurements of the strain and shape of dielectric/metallic wrap-gated InAs nanowires
(
- Contribution to journal › Article
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Mark
Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric
(
- Contribution to journal › Article
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Mark
Strain in semiconductor core-shell nanowires
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- Contribution to journal › Article
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Mark
Gallium phosphide nanowire arrays and their possible application in cellular force investigations
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- Contribution to journal › Article
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Mark
Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures
(
- Contribution to journal › Article
- 2008
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Mark
Bismuth-stabilized (2x1) and (2x4) reconstructions on GaAs(100) surfaces: Combined first-principles, photoemission, and scanning tunneling microscopy study
(
- Contribution to journal › Article