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- 2010
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Mark
Determination of diffusion lengths in nanowires using cathodoluminescence
- Contribution to journal › Article
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Mark
Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching
- Contribution to journal › Article
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Mark
Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon
- Contribution to journal › Article
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Mark
Doping Incorporation in InAs nanowires characterized by capacitance measurements
- Contribution to journal › Article
- 2009
-
Mark
Investigation of electron wave function hybridization in Ga0.25In0.75As/InP arrays
- Contribution to journal › Article
-
Mark
Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric
- Contribution to journal › Article
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Mark
X-ray measurements of the strain and shape of dielectric/metallic wrap-gated InAs nanowires
- Contribution to journal › Article
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Mark
Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures
- Contribution to journal › Article
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Mark
Gallium phosphide nanowire arrays and their possible application in cellular force investigations
- Contribution to journal › Article
-
Mark
Strain in semiconductor core-shell nanowires
- Contribution to journal › Article
