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- 2013
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Mark
Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates
(
- Contribution to journal › Article
- 2012
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Mark
Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
(
- Contribution to journal › Published meeting abstract
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Mark
High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
(
- Contribution to journal › Article
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Mark
Highly controlled InAs nanowires on Si(111) wafers by MOVPE
2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week 9(2).(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
High frequency vertical InAs nanowire MOSFETs integrated on Si substrates
2012) 38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week In Physica Status Solidi. C, Current Topics in Solid State Physics 9(2). p.350-353(
- Contribution to journal › Article
- 2011
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Mark
Temperature and annealing effects on InAs nanowire MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
(
- Contribution to journal › Article