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2025
Mark Effect of substrate misorientation angle on the structural properties of N-polar GaN grown by hot-wall MOCVD on 4H-SiC(0001̄)
Zhang, Hengfang ; Chen, Jr Tai ; Papamichail, Alexis ; Persson, Ingemar ; Tran, Dat Q. ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2025) In Journal of Crystal Growth 651.
- Contribution to journal › Article
2023
Mark High-quality N-polar GaN optimization by multi-step temperature growth process
Zhang, Hengfang ; Chen Jr., Tai ; Papamichail, Alexis ; Persson, Ingemar ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2023) In Journal of Crystal Growth 603.
- Contribution to journal › Article
Mark Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures
Zhang, Hengfang ; Persson, Ingemar ; Chen Jr., Tai ; Papamichail, Alexis ; Tran, Dat Q. ; Persson, Per O. Å. ; Paskov, Plamen P. and Darakchieva, Vanya ^LU (2023) In Crystal Growth and Design 23(2). p.1049-1056
- Contribution to journal › Article

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