1 – 7 of 7
- show: 10
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=" "
width=" "
height=" "
allowtransparency="true"
frameborder="0">
</iframe>
- 2018
-
Mark
InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition
(
- Contribution to journal › Article
- 2013
-
Mark
Control of composition and morphology in InGaAs nanowires grown by metalorganic vapor phase epitaxy
(
- Contribution to journal › Article
- 2011
-
Mark
Interface composition of InAs nanowires with Al2O2 and HfO2 thin films
(
- Contribution to journal › Article
-
Mark
Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
(
- Contribution to journal › Article
-
Mark
Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality
(
- Contribution to journal › Article
-
Mark
High quality InAs and GaSb thin layers grown on Si (111)
(
- Contribution to journal › Article
- 2009
-
Mark
Electrical characterization of thin InAs films grown on patterned W/GaAs substrates
(
- Contribution to journal › Article