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- 2010
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Mark
Gate-defined double quantum dot with integrated charge sensors realized in InGaAs/InP by incorporating a high-kappa dielectric
(
- Contribution to journal › Article
- 2009
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Mark
Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric
(
- Contribution to journal › Article
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Mark
g-factor and exchange energy in a few-electron lateral InGaAs quantum dot
(
- Contribution to journal › Article
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Mark
Giant, level-dependent g factors in InSb nanowire quantum dots.
(
- Contribution to journal › Article
-
Mark
Gate-defined quantum devices realized on an InGaAs/InP heterostructure by incorporating a high-kappa dielectric material
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2008
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Mark
A highly tunable lateral quantum dot realized in InGaAs/InP by an etching technique
(
- Contribution to journal › Article
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Mark
Electron transport study of a lateral InGaAs quantum dot
(
- Contribution to journal › Article
- 2006
-
Mark
Strain mapping in heterostructured wurtzite InAs/InP nanowires
2006) Semiconductor Nanowires Symposium, 2006(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Epitaxial growth of III-V nanowires on silicon substrates
2006) 13th Intl Conf on MOVPE, Miyazaki, Japan (2006)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2005
-
Mark
Tunable effective g factor in InAs nanowire quantum dots
(
- Contribution to journal › Article