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- 2017
- Local variation in Bi crystal sites of epitaxial GaAsBi studied by photoelectron spectroscopy and first-principles calculations
- 2015
- Line shape and composition of the In 3d(5/2) core-level photoemission for the interface analysis of In-containing III-V semiconductors
- Oxidized crystalline (3 x 1)-O surface phases of InAs and InSb studied by high-resolution photoelectron spectroscopy
- 2014
- Bismuth-containing c(4 x 4) surface structure of the GaAs(100) studied by synchrotron-radiation photoelectron spectroscopy and ab initio calculations
- Unveiling and controlling the electronic structure of oxidized semiconductor surfaces: Crystalline oxidized InSb(100)(1 x 2)-O
- 2013
- Photoemission and density functional theory study of Ge(100): Clean surface and Yb-induced (2x4) reconstruction
- 2012
- Formation of polar InN with surface Fermi level near the valence band maximum by means of ammonia nitridation
- Formation and destabilization of Ga interstitials in GaAsN: Experiment and theory
- 2011
- Dimer-T(3) reconstruction of the Sm/Si(100)(2 x 3) surface studied by high-resolution photoelectron spectroscopy and density functional theory calculations
- Properties of self-assembled Bi nanolines on InAs(100) studied by core-level and valence-band photoemission, and first-principles calculations
- Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides
- Oxidized In-containing III-V(100) surfaces: Formation of crystalline oxide films and semiconductor-oxide interfaces
- Surface core-level shifts on Ge(111)c(2 x 8): Experiment and theory
- Tin-stabilized (1 x 2) and (1 x 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations
- 2010
- Bismuth-stabilized c(2X6) reconstruction on a InSb(100) substrate: Violation of the electron counting model
- Atomic structure of Yb/Si(100)(2X6): Interrelation between the silicon dimer arrangement and Si 2p photoemission line shape
- Core-level shifts of the c(8 x 2)-reconstructed InAs(100) and InSb(100) surfaces
- 2008
- Yb-induced (2x3) and (2x4) reconstructions on Si(100) studied by first-principles calculations and high-resolution core-level photoelectron spectroscopy
- Anomalous bismuth-stabilized (2x1) reconstructions on GaAs(100) and InP(100) surfaces
- Bismuth-stabilized (2x1) and (2x4) reconstructions on GaAs(100) surfaces: Combined first-principles, photoemission, and scanning tunneling microscopy study
- 2007
- Atomic and electronic structure of the Yb∕Ge(111)-(3×2) surface studied by high-resolution photoelectron spectroscopy
- Atomic and electronic structure of the Yb/Ge(111)-(3x2) surface studied by high-resolution photoelectron spectroscopy
- A comparative study of clean and Bi-stabilized InP(100)(2 x 4) surfaces by the core-level photoelectron spectroscopy
- 2005
- Electronic and structural properties of GaAs(100)(2x4) and InAs(100)(2x4) surfaces studied by core-level photoemission and scanning tunneling microscopy
- 2004
- Electronic and structural analysis of Sb-induced GaAs(100)(2x4) and (2x8) surfaces