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- 2011
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Mark
Gate-Defined Quantum Devices Realized in InGaAs/InP by Incorporating a High-kappa Layer as Gate Dielectric
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2009
-
Mark
Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric
(
- Contribution to journal › Article