Memristive and Memcapacitive Characteristics of a Au/Ti-HfO2-InP/InGaAs Diode
(2011) In IEEE Electron Device Letters 32(2). p.131-133- Abstract
- This letter reports on room-temperature electrical measurements of a Au/Ti-HfO2-InP/InGaAs diode fabricated by atomic layer deposition and electron beam lithography. At forward bias voltages, the diode shows memristor characteristics, whereas at reverse bias voltages, the diode can be characterized as a memcapacitor. A parasitic accumulation layer of charges formed at the high-kappa oxide/InP interface is shown to be the cause for the phenomena. The operation of the diode as a rewritable memory cell is also demonstrated. The results highlight novel memristive and memcapacitive properties of high-kappa dielectrics on III-V semiconductors and their potential applications in nanoelectronics.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1872867
- author
- Sun, Jie LU ; Lind, Erik LU ; Maximov, Ivan LU and Xu, Hongqi LU
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- High-kappa HfO2, InP/InGaAs, memcapacitors, memristors, nanoelectronics
- in
- IEEE Electron Device Letters
- volume
- 32
- issue
- 2
- pages
- 131 - 133
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- wos:000286677700007
- scopus:79151486395
- ISSN
- 0741-3106
- DOI
- 10.1109/LED.2010.2090334
- language
- English
- LU publication?
- yes
- id
- 1dc1df12-cf6e-4508-a19c-ace6432ce513 (old id 1872867)
- date added to LUP
- 2016-04-01 13:25:50
- date last changed
- 2024-01-09 13:29:35
@article{1dc1df12-cf6e-4508-a19c-ace6432ce513, abstract = {{This letter reports on room-temperature electrical measurements of a Au/Ti-HfO2-InP/InGaAs diode fabricated by atomic layer deposition and electron beam lithography. At forward bias voltages, the diode shows memristor characteristics, whereas at reverse bias voltages, the diode can be characterized as a memcapacitor. A parasitic accumulation layer of charges formed at the high-kappa oxide/InP interface is shown to be the cause for the phenomena. The operation of the diode as a rewritable memory cell is also demonstrated. The results highlight novel memristive and memcapacitive properties of high-kappa dielectrics on III-V semiconductors and their potential applications in nanoelectronics.}}, author = {{Sun, Jie and Lind, Erik and Maximov, Ivan and Xu, Hongqi}}, issn = {{0741-3106}}, keywords = {{High-kappa HfO2; InP/InGaAs; memcapacitors; memristors; nanoelectronics}}, language = {{eng}}, number = {{2}}, pages = {{131--133}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{IEEE Electron Device Letters}}, title = {{Memristive and Memcapacitive Characteristics of a Au/Ti-HfO2-InP/InGaAs Diode}}, url = {{http://dx.doi.org/10.1109/LED.2010.2090334}}, doi = {{10.1109/LED.2010.2090334}}, volume = {{32}}, year = {{2011}}, }