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In Situ Etching for Total Control Over Axial and Radial Nanowire Growth

Borgström, Magnus LU orcid ; Wallentin, Jesper LU ; Trägårdh, Johanna LU ; Ramvall, Peter LU ; Ek, Martin LU orcid ; Wallenberg, Reine LU ; Samuelson, Lars LU and Deppert, Knut LU orcid (2010) In Nano Reseach 3(4). p.264-270
Abstract
We report a method using in situ etching to decouple the axial from the radial nanowire growth pathway, independent of other growth parameters. Thereby a wide range of growth parameters can be explored to improve the nanowire properties without concern of tapering or excess structural defects formed during radial growth. We demonstrate the method using etching by HCl during InP nanowire growth. The improved crystal quality of etched nanowires is indicated by strongly enhanced photoluminescence as compared to reference nanowires obtained without etching.
Please use this url to cite or link to this publication:
author
; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
MOVPE, photoluminescence, in situ etching, nanowire growth
in
Nano Reseach
volume
3
issue
4
pages
264 - 270
publisher
Springer
external identifiers
  • wos:000276179400004
  • scopus:77949453887
ISSN
1998-0124
DOI
10.1007/s12274-010-1029-x
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
id
013ef78e-648f-4fce-a2bf-c94fa08c1f99 (old id 1586958)
date added to LUP
2016-04-01 10:52:28
date last changed
2024-11-19 20:35:20
@article{013ef78e-648f-4fce-a2bf-c94fa08c1f99,
  abstract     = {{We report a method using in situ etching to decouple the axial from the radial nanowire growth pathway, independent of other growth parameters. Thereby a wide range of growth parameters can be explored to improve the nanowire properties without concern of tapering or excess structural defects formed during radial growth. We demonstrate the method using etching by HCl during InP nanowire growth. The improved crystal quality of etched nanowires is indicated by strongly enhanced photoluminescence as compared to reference nanowires obtained without etching.}},
  author       = {{Borgström, Magnus and Wallentin, Jesper and Trägårdh, Johanna and Ramvall, Peter and Ek, Martin and Wallenberg, Reine and Samuelson, Lars and Deppert, Knut}},
  issn         = {{1998-0124}},
  keywords     = {{MOVPE; photoluminescence; in situ etching; nanowire growth}},
  language     = {{eng}},
  number       = {{4}},
  pages        = {{264--270}},
  publisher    = {{Springer}},
  series       = {{Nano Reseach}},
  title        = {{In Situ Etching for Total Control Over Axial and Radial Nanowire Growth}},
  url          = {{http://dx.doi.org/10.1007/s12274-010-1029-x}},
  doi          = {{10.1007/s12274-010-1029-x}},
  volume       = {{3}},
  year         = {{2010}},
}