Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices
(2012) In Applied Physics Letters 101(4).- Abstract
- The effect of various doping profiles on the electronic transport in GaSb/InAs(Sb) nanowire tunnel diodes is investigated. Zn-doping of the GaSb segment increases both the peak current density and the current level in reverse bias. Top-gated diodes exhibit peak current modulation with a threshold voltage which can be controlled by Zn-doping the InAs(Sb) segment. By intentionally n-doping the InAs(Sb) segment degenerate doping on both sides of the heterojunction can be achieved, as well as tunnel diodes with peak current of 420 kA/cm(2) at V-DS = 0.16V and a record-high current density of 3.6 MA/cm(2) at V-DS = -0.5V. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739082]
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/3059849
- author
- Borg, Mattias LU ; Ek, Martin LU ; Ganjipour, Bahram LU ; Dey, Anil LU ; Dick Thelander, Kimberly LU ; Wernersson, Lars-Erik LU and Thelander, Claes LU
- organization
- publishing date
- 2012
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 101
- issue
- 4
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000306944700111
- scopus:84864468524
- ISSN
- 0003-6951
- DOI
- 10.1063/1.4739082
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Electrical and information technology (011041010), Polymer and Materials Chemistry (LTH) (011001041)
- id
- 954951c0-79cf-43f8-87a1-17e35aa5a33a (old id 3059849)
- date added to LUP
- 2016-04-01 10:30:43
- date last changed
- 2023-11-09 22:27:33
@article{954951c0-79cf-43f8-87a1-17e35aa5a33a, abstract = {{The effect of various doping profiles on the electronic transport in GaSb/InAs(Sb) nanowire tunnel diodes is investigated. Zn-doping of the GaSb segment increases both the peak current density and the current level in reverse bias. Top-gated diodes exhibit peak current modulation with a threshold voltage which can be controlled by Zn-doping the InAs(Sb) segment. By intentionally n-doping the InAs(Sb) segment degenerate doping on both sides of the heterojunction can be achieved, as well as tunnel diodes with peak current of 420 kA/cm(2) at V-DS = 0.16V and a record-high current density of 3.6 MA/cm(2) at V-DS = -0.5V. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739082]}}, author = {{Borg, Mattias and Ek, Martin and Ganjipour, Bahram and Dey, Anil and Dick Thelander, Kimberly and Wernersson, Lars-Erik and Thelander, Claes}}, issn = {{0003-6951}}, language = {{eng}}, number = {{4}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices}}, url = {{https://lup.lub.lu.se/search/files/1906785/3167617.pdf}}, doi = {{10.1063/1.4739082}}, volume = {{101}}, year = {{2012}}, }