Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Reduction of the Schottky barrier height on silicon carbide using Au nano-particles

Lee, SK ; Zetterling, CM ; Ostling, M ; Åberg, I ; Magnusson, Martin LU ; Deppert, Knut LU orcid ; Wernersson, Lars-Erik LU ; Samuelson, Lars LU and Litwin, A (2002) In Solid-State Electronics 46(9). p.1433-1440
Abstract
By the incorporation of size-selected Au nano-particles in Ti Schottky contacts on silicon carbide, we could observe considerably lower the barrier height of the contacts. This result could be obtained for both n- and p-type Schottky contacts using current-voltage and capacitance voltage measurements. For n-type Schottky contacts, we observed reductions of 0.19-0.25 eV on 4H-SiC and 0.15-0.17 eV on 6H-SiC as compared with particle-free Ti Schottky contacts. For p-type SiC, the reduction was a little lower with 0.02-0.05 eV on 4H- and 0.10-0.13 eV on 6H-SiC. The reduction of the Schottky barrier height is explained using a model with enhanced electric field at the interface due to the small size of the circular patch and the large... (More)
By the incorporation of size-selected Au nano-particles in Ti Schottky contacts on silicon carbide, we could observe considerably lower the barrier height of the contacts. This result could be obtained for both n- and p-type Schottky contacts using current-voltage and capacitance voltage measurements. For n-type Schottky contacts, we observed reductions of 0.19-0.25 eV on 4H-SiC and 0.15-0.17 eV on 6H-SiC as compared with particle-free Ti Schottky contacts. For p-type SiC, the reduction was a little lower with 0.02-0.05 eV on 4H- and 0.10-0.13 eV on 6H-SiC. The reduction of the Schottky barrier height is explained using a model with enhanced electric field at the interface due to the small size of the circular patch and the large difference of the barrier height between Ti and Au. (Less)
Please use this url to cite or link to this publication:
author
; ; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
image force, silicon carbide, nano-particles, Schottky barrier height, lowering
in
Solid-State Electronics
volume
46
issue
9
pages
1433 - 1440
publisher
Elsevier
external identifiers
  • wos:000177493800028
  • scopus:0036721655
ISSN
0038-1101
DOI
10.1016/S0038-1101(02)00122-3
language
English
LU publication?
yes
id
9e48d8ac-e068-424c-8f5e-3885f231d949 (old id 330238)
date added to LUP
2016-04-01 12:13:01
date last changed
2022-04-21 04:20:33
@article{9e48d8ac-e068-424c-8f5e-3885f231d949,
  abstract     = {{By the incorporation of size-selected Au nano-particles in Ti Schottky contacts on silicon carbide, we could observe considerably lower the barrier height of the contacts. This result could be obtained for both n- and p-type Schottky contacts using current-voltage and capacitance voltage measurements. For n-type Schottky contacts, we observed reductions of 0.19-0.25 eV on 4H-SiC and 0.15-0.17 eV on 6H-SiC as compared with particle-free Ti Schottky contacts. For p-type SiC, the reduction was a little lower with 0.02-0.05 eV on 4H- and 0.10-0.13 eV on 6H-SiC. The reduction of the Schottky barrier height is explained using a model with enhanced electric field at the interface due to the small size of the circular patch and the large difference of the barrier height between Ti and Au.}},
  author       = {{Lee, SK and Zetterling, CM and Ostling, M and Åberg, I and Magnusson, Martin and Deppert, Knut and Wernersson, Lars-Erik and Samuelson, Lars and Litwin, A}},
  issn         = {{0038-1101}},
  keywords     = {{image force; silicon carbide; nano-particles; Schottky barrier height; lowering}},
  language     = {{eng}},
  number       = {{9}},
  pages        = {{1433--1440}},
  publisher    = {{Elsevier}},
  series       = {{Solid-State Electronics}},
  title        = {{Reduction of the Schottky barrier height on silicon carbide using Au nano-particles}},
  url          = {{http://dx.doi.org/10.1016/S0038-1101(02)00122-3}},
  doi          = {{10.1016/S0038-1101(02)00122-3}},
  volume       = {{46}},
  year         = {{2002}},
}