Electrical properties of InAs-based nanowires
(2004) Electronic Properties of Synthetic Nanostructures. XVIII International Winterschool/Euroconference on Electronic Properties of Novel Materials 723. p.449-452- Abstract
- Semiconductor nanowires are grown using chemical beam epitaxy and metal organic vapor phase epitaxy from size-selected gold nanoparticles acting as catalysts. By changing materials during the growth it is possible to form heterostructures both along the length of the nanowires but also in a core-shell fashion. In particular, incorporation of pairs of InP tunnel barriers in InAs nanowires has been used to fabricate single-electron transistors and resonant tunneling diodes
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/613614
- author
- Thelander, Claes LU ; Björk, Mikael LU ; Mårtensson, Thomas LU ; Larsson, Marcus LU ; Hansen, Adam LU ; Deppert, Knut LU ; Sköld, Niklas LU ; Wallenberg, Reine LU ; Seifert, Werner LU and Samuelson, Lars LU
- organization
- publishing date
- 2004
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- InAs-InP, Au, resonant tunneling diodes, catalysts, heterostructures, semiconductor nanowires, electrical properties, chemical beam epitaxy, gold nanoparticles, metal organic vapor phase epitaxy, single electron transistors, InP tunnel barriers
- host publication
- AIP Conference Proceedings
- volume
- 723
- pages
- 449 - 452
- publisher
- American Institute of Physics (AIP)
- conference name
- Electronic Properties of Synthetic Nanostructures. XVIII International Winterschool/Euroconference on Electronic Properties of Novel Materials
- conference location
- Tirol, Austria
- conference dates
- 2004-03-06 - 2004-03-13
- external identifiers
-
- wos:000224699400097
- other:CODEN: APCPCS
- ISSN
- 0094-243X
- 1551-7616
- language
- English
- LU publication?
- yes
- id
- d1c6e694-6ce8-4e19-b5ae-716f285fe0b7 (old id 613614)
- date added to LUP
- 2016-04-01 12:00:51
- date last changed
- 2019-03-08 03:30:27
@inproceedings{d1c6e694-6ce8-4e19-b5ae-716f285fe0b7, abstract = {{Semiconductor nanowires are grown using chemical beam epitaxy and metal organic vapor phase epitaxy from size-selected gold nanoparticles acting as catalysts. By changing materials during the growth it is possible to form heterostructures both along the length of the nanowires but also in a core-shell fashion. In particular, incorporation of pairs of InP tunnel barriers in InAs nanowires has been used to fabricate single-electron transistors and resonant tunneling diodes}}, author = {{Thelander, Claes and Björk, Mikael and Mårtensson, Thomas and Larsson, Marcus and Hansen, Adam and Deppert, Knut and Sköld, Niklas and Wallenberg, Reine and Seifert, Werner and Samuelson, Lars}}, booktitle = {{AIP Conference Proceedings}}, issn = {{0094-243X}}, keywords = {{InAs-InP; Au; resonant tunneling diodes; catalysts; heterostructures; semiconductor nanowires; electrical properties; chemical beam epitaxy; gold nanoparticles; metal organic vapor phase epitaxy; single electron transistors; InP tunnel barriers}}, language = {{eng}}, pages = {{449--452}}, publisher = {{American Institute of Physics (AIP)}}, title = {{Electrical properties of InAs-based nanowires}}, volume = {{723}}, year = {{2004}}, }