Hongqi Xu (Former)
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- 2016
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Mark
Schottky barrier and contact resistance of InSb nanowire field-effect transistors
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- Contribution to journal › Article
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Electronic Structures of Free-Standing Nanowires made from Indirect Bandgap Semiconductor Gallium Phosphide
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- Contribution to journal › Article
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Probe of local impurity states by bend resistance measurements in graphene cross junctions
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- Contribution to journal › Article
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Mark
Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts
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- Contribution to journal › Article
- 2015
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Mark
Patterning two-dimensional chalcogenide crystals of Bi2Se3 and In2Se3 and efficient photodetectors.
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- Contribution to journal › Article
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Mark
Transport studies of electron-hole and spin-orbit interaction in GaSb/InAsSb core-shell nanowire quantum dots
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- Contribution to journal › Article
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Mark
Growth of In As nanowires with the morphology and crystal structure controlled by carrier gas flow rate
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- Contribution to journal › Article
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Mark
Phase-coherent transport and spin relaxation in InAs nanowires grown by molecule beam epitaxy
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- Contribution to journal › Article
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Mark
Electronic structures of [001]- and [111]-oriented InSb and GaSb free-standing nanowires
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- Contribution to journal › Article
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Mark
Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy
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- Contribution to journal › Article