Anders Gustafsson
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- 2002
-
Mark
Anti-domain-free GaP, grown in atomically flat (001) Si sub-mu m-sized openings
(
- Contribution to journal › Article
-
Mark
Epitaxially overgrown, stable W-GaAs Schottky contacts with sizes down to 50 nm
(
- Contribution to journal › Article
-
Mark
Oxidation and reduction behaviour of Ge/Si islands
2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Optical characterisation of InAs quantum dots grown on {110} cleaved GaAs facets
2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence.
(
- Contribution to journal › Article
-
Mark
Cathodoluminescence for studies of low dimensional semiconductor structures
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Electron beam induced luminescence studies of low-dimensional semiconducotor structures
(
- Chapter in Book/Report/Conference proceeding › Book chapter
-
Mark
Mechanisms of self-ordering in nonplanar eptaxy of semiconductor nanostructures
(
- Contribution to journal › Article
- 1993
-
Mark
Reevaluation of blueshifts introduced by lateral confinement in quantum-well wire structures
(
- Contribution to journal › Article
- 1991
-
Mark
Cathodoluminescence studies of III-V epitaxial layers
1991)(
- Thesis › Doctoral thesis (compilation)