Anders Gustafsson
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- 2004
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Mark
Epitaxial III-V nanowires on silicon
(
- Contribution to journal › Article
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Mark
Single-crystalline Ge grown epitaxially on oxidized and reduced Ge/Si(100) islands
(
- Contribution to journal › Article
- 2002
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Mark
Anti-domain-free GaP, grown in atomically flat (001) Si sub-mu m-sized openings
(
- Contribution to journal › Article
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Mark
Thin layers of GaInP, GaP and GaAsP in metalorganic vapour phase epitaxy-grown resonant tunnelling diodes
(
- Contribution to journal › Article
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Mark
Epitaxially overgrown, stable W-GaAs Schottky contacts with sizes down to 50 nm
(
- Contribution to journal › Article
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Mark
Metalorganic vapor phase epitaxy-grown GaP/GaAs/GaP and GaAsP/GaAs/GaAsP n-type resonant tunnelling diodes
(
- Contribution to journal › Article
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Mark
Oxidation and reduction behavior of Ge/Si islands
(
- Contribution to journal › Article
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Mark
Cathodoluminescence for studies of low dimensional semiconductor structures
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Optical characterisation of InAs quantum dots grown on {110} cleaved GaAs facets
2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Electron beam induced luminescence studies of low-dimensional semiconducotor structures
(
- Chapter in Book/Report/Conference proceeding › Book chapter