Claes Thelander
91 – 100 of 149
- show: 10
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=" "
width=" "
height=" "
allowtransparency="true"
frameborder="0">
</iframe>
- 2010
-
Mark
Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.
(
- Contribution to journal › Article
-
Mark
Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2
(
- Contribution to journal › Letter
-
Mark
Time-resolved photoluminescence investigations on HfO2-capped InP nanowires
(
- Contribution to journal › Article
-
Mark
Temperature dependent properties of InSb and InAs nanowire field-effect transistors
(
- Contribution to journal › Article
-
Mark
Approaches to doctoral supervision in relation to student expectations : Project report for the Docent course at LTH, Lund, Sweden, October 2010
2010)(
- Book/Report › Report
-
Mark
A study of supervision approaches : The needs of doctoral supervision from a student perspective
(
- Contribution to specialist publication or newspaper › Specialist publication article
-
Mark
InAs/GaSb heterostructure nanowires for tunnel FETs
2010) 15th international conference on metal organic vapor phase epitaxy, 2010(
- Contribution to conference › Paper, not in proceeding
-
Mark
Vertical dual wrapgated-induced field effect diode
2010) 30th International Conference on the Physics of Semiconductors, 2010(
- Contribution to conference › Paper, not in proceeding
-
Mark
Vertical InAs nanowire wrap gate transistors for integration on a Si platform
2010) GigaHertz Symposium, 2010(
- Contribution to conference › Paper, not in proceeding
-
Mark
InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors.
(
- Contribution to journal › Article