Fredrik Lindelöw (Former)
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- 2016
-
Mark
InP nanowire p-type doping via Zinc indiffusion
(
- Contribution to journal › Article
-
Mark
High-frequency InGaAs tri-gate MOSFETs with fmax of 400 GHz
(
- Contribution to journal › Article
-
Mark
InGaAs nanowire MOSFETs with ION = 555 μa/μm at IOFF = 100 nA/μm and VDD = 0.5 v
2016) 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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