Lars Samuelson
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- 2006
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Mark
Few-electron quantum dots defined in InAs quantum wires by local gate electrodes
2006) International Conference on Nanoscience and Technology, 2006(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Grazing incidence X-ry measurements of epitaxial nanowires
2006) Semiconductor Nanowires Symposium, 2006(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2005
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Mark
A new understanding of au-assisted growth of III-V semiconductor nanowires
(
- Contribution to journal › Article
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Mark
Epitaxially grown GaP/GaAs1-xPx/GaP double heterostructure nanowires for optical applications
(
- Contribution to journal › Article
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Mark
Nanometer-scale two-terminal semiconductor memory operating at room temperature
(
- Contribution to journal › Article
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Mark
Strain effects on individual quantum dots: Dependence of cap layer thickness
(
- Contribution to journal › Article
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Mark
Random telegraph noise in the photon emission from semiconductor quantum dots
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Spin relaxation in InAs nanowires studied by tunable weak antilocalization
(
- Contribution to journal › Article
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Mark
Wrap-gated InAs nanowire field-effect transistor
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Vertical high mobility wrap-gated InAs nanowire transistor
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding