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- 2016
-
Mark
InAs nanowire GAA n-MOSFETs with 12-15 nm diameter
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2011
-
Mark
InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices
(
- Contribution to journal › Article
-
Mark
Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study
(
- Contribution to journal › Article
-
Mark
GaSb nanowire single-hole transistor
(
- Contribution to journal › Article
- 2010
-
Mark
III-V Nanowires-Extending a Narrowing Road
(
- Contribution to journal › Article
- 2008
-
Mark
Vertical InAs Nanowire Wrap Gate Transistors on Si Substrates
(
- Contribution to journal › Article
-
Mark
Drive current and threshold voltage control in vertical InAs wrap-gate transistors
(
- Contribution to journal › Article
-
Mark
GaAs/GaSb nanowire heterostructures grown by MOVPE
(
- Contribution to journal › Article
-
Mark
Vertical enhancement-mode InAs nanowire field-effect transistor with 50-nm wrap gate
(
- Contribution to journal › Article
-
Mark
Heterostructure Barriers in Wrap Gated Nanowire FETs
(
- Contribution to journal › Article