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High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET

Egard, Mikael LU ; Ohlsson, Lars LU ; Ärlelid, Mats LU ; Persson, Karl-Magnus LU ; Borg, Mattias LU ; Lenrick, Filip LU ; Wallenberg, Reine LU ; Lind, Erik LU and Wernersson, Lars-Erik LU (2012) In IEEE Electron Device Letters 33(3). p.369-371
Abstract
We have developed a self-aligned L-g = 55 nm In-0.53 Ga-0.47 As MOSFET incorporating metal-organic chemical vapor deposition regrown n(++) In0.6Ga0.4As source and drain regions, which enables a record low on-resistance of 199 Omega mu m. The regrowth process includes an InP support layer, which is later removed selectively to the n(++) contact layer. This process forms a high-frequency compatible device using a low-complexity fabrication scheme. We report on high-frequency measurements showing f(max) of 292 GHz and f(t) of 244 GHz. These results are accompanied by modeling of the device, which accounts for the frequency response of gate oxide border traps and impact ionization phenomenon found in narrow band gap FETs. The device also shows... (More)
We have developed a self-aligned L-g = 55 nm In-0.53 Ga-0.47 As MOSFET incorporating metal-organic chemical vapor deposition regrown n(++) In0.6Ga0.4As source and drain regions, which enables a record low on-resistance of 199 Omega mu m. The regrowth process includes an InP support layer, which is later removed selectively to the n(++) contact layer. This process forms a high-frequency compatible device using a low-complexity fabrication scheme. We report on high-frequency measurements showing f(max) of 292 GHz and f(t) of 244 GHz. These results are accompanied by modeling of the device, which accounts for the frequency response of gate oxide border traps and impact ionization phenomenon found in narrow band gap FETs. The device also shows a high drive current of 2.0 mA/mu m and a high extrinsic transconductance of 1.9 mS/mu m. These excellent properties are attributed to the use of a gate-last process, which does not include high temperature or dry-etch processes. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Gate-last, InGaAs, metal-organic chemical vapor deposition (MOCVD), regrowth, MOSFET, self-aligned, surface channel
in
IEEE Electron Device Letters
volume
33
issue
3
pages
369 - 371
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000300580000023
  • scopus:84857453827
ISSN
0741-3106
DOI
10.1109/LED.2011.2181323
language
English
LU publication?
yes
id
18beb3f1-842d-4a2e-ab33-4d79a3d5a1d4 (old id 2379295)
date added to LUP
2012-03-27 16:49:27
date last changed
2017-10-01 04:12:13
@article{18beb3f1-842d-4a2e-ab33-4d79a3d5a1d4,
  abstract     = {We have developed a self-aligned L-g = 55 nm In-0.53 Ga-0.47 As MOSFET incorporating metal-organic chemical vapor deposition regrown n(++) In0.6Ga0.4As source and drain regions, which enables a record low on-resistance of 199 Omega mu m. The regrowth process includes an InP support layer, which is later removed selectively to the n(++) contact layer. This process forms a high-frequency compatible device using a low-complexity fabrication scheme. We report on high-frequency measurements showing f(max) of 292 GHz and f(t) of 244 GHz. These results are accompanied by modeling of the device, which accounts for the frequency response of gate oxide border traps and impact ionization phenomenon found in narrow band gap FETs. The device also shows a high drive current of 2.0 mA/mu m and a high extrinsic transconductance of 1.9 mS/mu m. These excellent properties are attributed to the use of a gate-last process, which does not include high temperature or dry-etch processes.},
  author       = {Egard, Mikael and Ohlsson, Lars and Ärlelid, Mats and Persson, Karl-Magnus and Borg, Mattias and Lenrick, Filip and Wallenberg, Reine and Lind, Erik and Wernersson, Lars-Erik},
  issn         = {0741-3106},
  keyword      = {Gate-last,InGaAs,metal-organic chemical vapor deposition (MOCVD),regrowth,MOSFET,self-aligned,surface channel},
  language     = {eng},
  number       = {3},
  pages        = {369--371},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Electron Device Letters},
  title        = {High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET},
  url          = {http://dx.doi.org/10.1109/LED.2011.2181323},
  volume       = {33},
  year         = {2012},
}