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Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices

Borg, Mattias LU ; Ek, Martin LU ; Ganjipour, Bahram LU ; Dey, Anil LU ; Dick Thelander, Kimberly LU ; Wernersson, Lars-Erik LU and Thelander, Claes LU (2012) In Applied Physics Letters 101(4).
Abstract
The effect of various doping profiles on the electronic transport in GaSb/InAs(Sb) nanowire tunnel diodes is investigated. Zn-doping of the GaSb segment increases both the peak current density and the current level in reverse bias. Top-gated diodes exhibit peak current modulation with a threshold voltage which can be controlled by Zn-doping the InAs(Sb) segment. By intentionally n-doping the InAs(Sb) segment degenerate doping on both sides of the heterojunction can be achieved, as well as tunnel diodes with peak current of 420 kA/cm(2) at V-DS = 0.16V and a record-high current density of 3.6 MA/cm(2) at V-DS = -0.5V. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739082]
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
101
issue
4
publisher
American Institute of Physics
external identifiers
  • wos:000306944700111
  • scopus:84864468524
ISSN
0003-6951
DOI
10.1063/1.4739082
language
English
LU publication?
yes
id
954951c0-79cf-43f8-87a1-17e35aa5a33a (old id 3059849)
date added to LUP
2012-09-26 10:25:27
date last changed
2017-08-27 03:27:25
@article{954951c0-79cf-43f8-87a1-17e35aa5a33a,
  abstract     = {The effect of various doping profiles on the electronic transport in GaSb/InAs(Sb) nanowire tunnel diodes is investigated. Zn-doping of the GaSb segment increases both the peak current density and the current level in reverse bias. Top-gated diodes exhibit peak current modulation with a threshold voltage which can be controlled by Zn-doping the InAs(Sb) segment. By intentionally n-doping the InAs(Sb) segment degenerate doping on both sides of the heterojunction can be achieved, as well as tunnel diodes with peak current of 420 kA/cm(2) at V-DS = 0.16V and a record-high current density of 3.6 MA/cm(2) at V-DS = -0.5V. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739082]},
  author       = {Borg, Mattias and Ek, Martin and Ganjipour, Bahram and Dey, Anil and Dick Thelander, Kimberly and Wernersson, Lars-Erik and Thelander, Claes},
  issn         = {0003-6951},
  language     = {eng},
  number       = {4},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices},
  url          = {http://dx.doi.org/10.1063/1.4739082},
  volume       = {101},
  year         = {2012},
}