Reduction of the Schottky barrier height on silicon carbide using Au nano-particles
(2002) In Solid-State Electronics 46(9). p.1433-1440- Abstract
- By the incorporation of size-selected Au nano-particles in Ti Schottky contacts on silicon carbide, we could observe considerably lower the barrier height of the contacts. This result could be obtained for both n- and p-type Schottky contacts using current-voltage and capacitance voltage measurements. For n-type Schottky contacts, we observed reductions of 0.19-0.25 eV on 4H-SiC and 0.15-0.17 eV on 6H-SiC as compared with particle-free Ti Schottky contacts. For p-type SiC, the reduction was a little lower with 0.02-0.05 eV on 4H- and 0.10-0.13 eV on 6H-SiC. The reduction of the Schottky barrier height is explained using a model with enhanced electric field at the interface due to the small size of the circular patch and the large... (More)
- By the incorporation of size-selected Au nano-particles in Ti Schottky contacts on silicon carbide, we could observe considerably lower the barrier height of the contacts. This result could be obtained for both n- and p-type Schottky contacts using current-voltage and capacitance voltage measurements. For n-type Schottky contacts, we observed reductions of 0.19-0.25 eV on 4H-SiC and 0.15-0.17 eV on 6H-SiC as compared with particle-free Ti Schottky contacts. For p-type SiC, the reduction was a little lower with 0.02-0.05 eV on 4H- and 0.10-0.13 eV on 6H-SiC. The reduction of the Schottky barrier height is explained using a model with enhanced electric field at the interface due to the small size of the circular patch and the large difference of the barrier height between Ti and Au. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/330238
- author
- Lee, SK ; Zetterling, CM ; Ostling, M ; Åberg, I ; Magnusson, Martin LU ; Deppert, Knut LU ; Wernersson, Lars-Erik LU ; Samuelson, Lars LU and Litwin, A
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- image force, silicon carbide, nano-particles, Schottky barrier height, lowering
- in
- Solid-State Electronics
- volume
- 46
- issue
- 9
- pages
- 1433 - 1440
- publisher
- Elsevier
- external identifiers
-
- wos:000177493800028
- scopus:0036721655
- ISSN
- 0038-1101
- DOI
- 10.1016/S0038-1101(02)00122-3
- language
- English
- LU publication?
- yes
- id
- 9e48d8ac-e068-424c-8f5e-3885f231d949 (old id 330238)
- date added to LUP
- 2016-04-01 12:13:01
- date last changed
- 2022-04-21 04:20:33
@article{9e48d8ac-e068-424c-8f5e-3885f231d949, abstract = {{By the incorporation of size-selected Au nano-particles in Ti Schottky contacts on silicon carbide, we could observe considerably lower the barrier height of the contacts. This result could be obtained for both n- and p-type Schottky contacts using current-voltage and capacitance voltage measurements. For n-type Schottky contacts, we observed reductions of 0.19-0.25 eV on 4H-SiC and 0.15-0.17 eV on 6H-SiC as compared with particle-free Ti Schottky contacts. For p-type SiC, the reduction was a little lower with 0.02-0.05 eV on 4H- and 0.10-0.13 eV on 6H-SiC. The reduction of the Schottky barrier height is explained using a model with enhanced electric field at the interface due to the small size of the circular patch and the large difference of the barrier height between Ti and Au.}}, author = {{Lee, SK and Zetterling, CM and Ostling, M and Åberg, I and Magnusson, Martin and Deppert, Knut and Wernersson, Lars-Erik and Samuelson, Lars and Litwin, A}}, issn = {{0038-1101}}, keywords = {{image force; silicon carbide; nano-particles; Schottky barrier height; lowering}}, language = {{eng}}, number = {{9}}, pages = {{1433--1440}}, publisher = {{Elsevier}}, series = {{Solid-State Electronics}}, title = {{Reduction of the Schottky barrier height on silicon carbide using Au nano-particles}}, url = {{http://dx.doi.org/10.1016/S0038-1101(02)00122-3}}, doi = {{10.1016/S0038-1101(02)00122-3}}, volume = {{46}}, year = {{2002}}, }