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Reduction of the Schottky barrier height on silicon carbide using Au nano-particles

Lee, SK; Zetterling, CM; Ostling, M; Åberg, I; Magnusson, Martin LU ; Deppert, Knut LU ; Wernersson, Lars-Erik LU ; Samuelson, Lars LU and Litwin, A (2002) In Solid-State Electronics 46(9). p.1433-1440
Abstract
By the incorporation of size-selected Au nano-particles in Ti Schottky contacts on silicon carbide, we could observe considerably lower the barrier height of the contacts. This result could be obtained for both n- and p-type Schottky contacts using current-voltage and capacitance voltage measurements. For n-type Schottky contacts, we observed reductions of 0.19-0.25 eV on 4H-SiC and 0.15-0.17 eV on 6H-SiC as compared with particle-free Ti Schottky contacts. For p-type SiC, the reduction was a little lower with 0.02-0.05 eV on 4H- and 0.10-0.13 eV on 6H-SiC. The reduction of the Schottky barrier height is explained using a model with enhanced electric field at the interface due to the small size of the circular patch and the large... (More)
By the incorporation of size-selected Au nano-particles in Ti Schottky contacts on silicon carbide, we could observe considerably lower the barrier height of the contacts. This result could be obtained for both n- and p-type Schottky contacts using current-voltage and capacitance voltage measurements. For n-type Schottky contacts, we observed reductions of 0.19-0.25 eV on 4H-SiC and 0.15-0.17 eV on 6H-SiC as compared with particle-free Ti Schottky contacts. For p-type SiC, the reduction was a little lower with 0.02-0.05 eV on 4H- and 0.10-0.13 eV on 6H-SiC. The reduction of the Schottky barrier height is explained using a model with enhanced electric field at the interface due to the small size of the circular patch and the large difference of the barrier height between Ti and Au. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
image force, silicon carbide, nano-particles, Schottky barrier height, lowering
in
Solid-State Electronics
volume
46
issue
9
pages
1433 - 1440
publisher
Elsevier
external identifiers
  • wos:000177493800028
  • scopus:0036721655
ISSN
0038-1101
DOI
10.1016/S0038-1101(02)00122-3
language
English
LU publication?
yes
id
9e48d8ac-e068-424c-8f5e-3885f231d949 (old id 330238)
date added to LUP
2007-10-31 10:28:27
date last changed
2017-07-09 03:41:26
@article{9e48d8ac-e068-424c-8f5e-3885f231d949,
  abstract     = {By the incorporation of size-selected Au nano-particles in Ti Schottky contacts on silicon carbide, we could observe considerably lower the barrier height of the contacts. This result could be obtained for both n- and p-type Schottky contacts using current-voltage and capacitance voltage measurements. For n-type Schottky contacts, we observed reductions of 0.19-0.25 eV on 4H-SiC and 0.15-0.17 eV on 6H-SiC as compared with particle-free Ti Schottky contacts. For p-type SiC, the reduction was a little lower with 0.02-0.05 eV on 4H- and 0.10-0.13 eV on 6H-SiC. The reduction of the Schottky barrier height is explained using a model with enhanced electric field at the interface due to the small size of the circular patch and the large difference of the barrier height between Ti and Au.},
  author       = {Lee, SK and Zetterling, CM and Ostling, M and Åberg, I and Magnusson, Martin and Deppert, Knut and Wernersson, Lars-Erik and Samuelson, Lars and Litwin, A},
  issn         = {0038-1101},
  keyword      = {image force,silicon carbide,nano-particles,Schottky barrier height,lowering},
  language     = {eng},
  number       = {9},
  pages        = {1433--1440},
  publisher    = {Elsevier},
  series       = {Solid-State Electronics},
  title        = {Reduction of the Schottky barrier height on silicon carbide using Au nano-particles},
  url          = {http://dx.doi.org/10.1016/S0038-1101(02)00122-3},
  volume       = {46},
  year         = {2002},
}