RF and DC Analysis of Stressed InGaAs MOSFETs
(2014) In IEEE Electron Device Letters 35(2). p.181-183- Abstract
- A complete reliability study of the DC and RF characteristics for InGaAs nMOSFETs with aluminium oxide/ hafnium oxide dielectric is presented. The main stress variation at high frequencies is related to a threshold voltage shift, whereas no decrease is found in the maximum of the cut-off frequency and RF-transconductance. Constant gate stress leads to a charge build up causing a threshold voltage shift. Furthermore, electron trapping at the drain side degrades the performance after hot carrier stress. The maximum DC-transconductance is reduced following constant gate bias stress, by an increase in charge trapping at border defects. These border defects at the channel/high-k interface are filled by cold carrier trapping when the transistor... (More)
- A complete reliability study of the DC and RF characteristics for InGaAs nMOSFETs with aluminium oxide/ hafnium oxide dielectric is presented. The main stress variation at high frequencies is related to a threshold voltage shift, whereas no decrease is found in the maximum of the cut-off frequency and RF-transconductance. Constant gate stress leads to a charge build up causing a threshold voltage shift. Furthermore, electron trapping at the drain side degrades the performance after hot carrier stress. The maximum DC-transconductance is reduced following constant gate bias stress, by an increase in charge trapping at border defects. These border defects at the channel/high-k interface are filled by cold carrier trapping when the transistor is turned on, whereas they do not respond at high frequencies. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4286497
- author
- Roll, Guntrade
LU
; Lind, Erik
LU
; Egard, Mikael ; Johansson, Sofia LU ; Ohlsson, Lars LU
and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2014
- type
- Contribution to specialist publication or newspaper
- publication status
- published
- subject
- keywords
- high-k, InGaAs, MOSFET, reliablity, RF
- categories
- Popular Science
- in
- IEEE Electron Device Letters
- volume
- 35
- issue
- 2
- pages
- 181 - 183
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- wos:000331377500011
- scopus:84893836615
- ISSN
- 0741-3106
- DOI
- 10.1109/LED.2013.2295526
- language
- English
- LU publication?
- yes
- id
- 85733d8f-8fdf-4931-b033-f147772ffbda (old id 4286497)
- date added to LUP
- 2016-04-01 13:14:10
- date last changed
- 2024-04-24 05:17:56
@misc{85733d8f-8fdf-4931-b033-f147772ffbda, abstract = {{A complete reliability study of the DC and RF characteristics for InGaAs nMOSFETs with aluminium oxide/ hafnium oxide dielectric is presented. The main stress variation at high frequencies is related to a threshold voltage shift, whereas no decrease is found in the maximum of the cut-off frequency and RF-transconductance. Constant gate stress leads to a charge build up causing a threshold voltage shift. Furthermore, electron trapping at the drain side degrades the performance after hot carrier stress. The maximum DC-transconductance is reduced following constant gate bias stress, by an increase in charge trapping at border defects. These border defects at the channel/high-k interface are filled by cold carrier trapping when the transistor is turned on, whereas they do not respond at high frequencies.}}, author = {{Roll, Guntrade and Lind, Erik and Egard, Mikael and Johansson, Sofia and Ohlsson, Lars and Wernersson, Lars-Erik}}, issn = {{0741-3106}}, keywords = {{high-k; InGaAs; MOSFET; reliablity; RF}}, language = {{eng}}, number = {{2}}, pages = {{181--183}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{IEEE Electron Device Letters}}, title = {{RF and DC Analysis of Stressed InGaAs MOSFETs}}, url = {{https://lup.lub.lu.se/search/files/3248151/4292503.pdf}}, doi = {{10.1109/LED.2013.2295526}}, volume = {{35}}, year = {{2014}}, }