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RF and DC Analysis of Stressed InGaAs MOSFETs

Roll, Guntrade LU ; Lind, Erik LU ; Egard, Mikael ; Johansson, Sofia LU ; Ohlsson, Lars LU orcid and Wernersson, Lars-Erik LU (2014) In IEEE Electron Device Letters 35(2). p.181-183
Abstract
A complete reliability study of the DC and RF characteristics for InGaAs nMOSFETs with aluminium oxide/ hafnium oxide dielectric is presented. The main stress variation at high frequencies is related to a threshold voltage shift, whereas no decrease is found in the maximum of the cut-off frequency and RF-transconductance. Constant gate stress leads to a charge build up causing a threshold voltage shift. Furthermore, electron trapping at the drain side degrades the performance after hot carrier stress. The maximum DC-transconductance is reduced following constant gate bias stress, by an increase in charge trapping at border defects. These border defects at the channel/high-k interface are filled by cold carrier trapping when the transistor... (More)
A complete reliability study of the DC and RF characteristics for InGaAs nMOSFETs with aluminium oxide/ hafnium oxide dielectric is presented. The main stress variation at high frequencies is related to a threshold voltage shift, whereas no decrease is found in the maximum of the cut-off frequency and RF-transconductance. Constant gate stress leads to a charge build up causing a threshold voltage shift. Furthermore, electron trapping at the drain side degrades the performance after hot carrier stress. The maximum DC-transconductance is reduced following constant gate bias stress, by an increase in charge trapping at border defects. These border defects at the channel/high-k interface are filled by cold carrier trapping when the transistor is turned on, whereas they do not respond at high frequencies. (Less)
Please use this url to cite or link to this publication:
author
; ; ; ; and
organization
publishing date
type
Contribution to specialist publication or newspaper
publication status
published
subject
keywords
high-k, InGaAs, MOSFET, reliablity, RF
categories
Popular Science
in
IEEE Electron Device Letters
volume
35
issue
2
pages
181 - 183
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000331377500011
  • scopus:84893836615
ISSN
0741-3106
DOI
10.1109/LED.2013.2295526
language
English
LU publication?
yes
id
85733d8f-8fdf-4931-b033-f147772ffbda (old id 4286497)
date added to LUP
2016-04-01 13:14:10
date last changed
2021-09-29 03:08:13
@misc{85733d8f-8fdf-4931-b033-f147772ffbda,
  abstract     = {A complete reliability study of the DC and RF characteristics for InGaAs nMOSFETs with aluminium oxide/ hafnium oxide dielectric is presented. The main stress variation at high frequencies is related to a threshold voltage shift, whereas no decrease is found in the maximum of the cut-off frequency and RF-transconductance. Constant gate stress leads to a charge build up causing a threshold voltage shift. Furthermore, electron trapping at the drain side degrades the performance after hot carrier stress. The maximum DC-transconductance is reduced following constant gate bias stress, by an increase in charge trapping at border defects. These border defects at the channel/high-k interface are filled by cold carrier trapping when the transistor is turned on, whereas they do not respond at high frequencies.},
  author       = {Roll, Guntrade and Lind, Erik and Egard, Mikael and Johansson, Sofia and Ohlsson, Lars and Wernersson, Lars-Erik},
  issn         = {0741-3106},
  language     = {eng},
  number       = {2},
  pages        = {181--183},
  publisher    = {IEEE - Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Electron Device Letters},
  title        = {RF and DC Analysis of Stressed InGaAs MOSFETs},
  url          = {https://lup.lub.lu.se/search/files/3248151/4292503.pdf},
  doi          = {10.1109/LED.2013.2295526},
  volume       = {35},
  year         = {2014},
}