Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs

Zota, Cezar LU ; Roll, Guntrade LU ; Wernersson, Lars-Erik LU and Lind, Erik LU orcid (2014) In IEEE Transactions on Electron Devices 61(12). p.4078-4083
Abstract
We demonstrate InGaAs multigate MOSFETs, so-called FinFETs. The lateral nanowires constituting the channel in these devices have been formed using selective area regrowth, where the surfaces of the nanowires are crystallographic planes. L-g = 32 nm devices exhibit peak transconductance of 1.8 mS/mu m at V-ds = 0.5 V. We also report on RF characterization of these devices. A small-signal hybrid-p model is developed, which includes both the effect of impact ionization and border traps and shows good fit to measurement data. Simultaneously extracted f(t) and fmax are 280 and 312 GHz, respectively, which are the highest reported values of any III-V multiple-gate MOSFET.
Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
III-V, FinFET, InGaAs, MOSFET, MuGFET, RF, selective regrowth, trigate
in
IEEE Transactions on Electron Devices
volume
61
issue
12
pages
4078 - 4083
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000346573600020
  • scopus:84919478283
ISSN
0018-9383
DOI
10.1109/TED.2014.2363732
language
English
LU publication?
yes
id
d0bcd9a1-905c-4c92-9175-9f3e5e35d12f (old id 4944681)
date added to LUP
2016-04-01 15:02:47
date last changed
2024-03-14 10:28:53
@article{d0bcd9a1-905c-4c92-9175-9f3e5e35d12f,
  abstract     = {{We demonstrate InGaAs multigate MOSFETs, so-called FinFETs. The lateral nanowires constituting the channel in these devices have been formed using selective area regrowth, where the surfaces of the nanowires are crystallographic planes. L-g = 32 nm devices exhibit peak transconductance of 1.8 mS/mu m at V-ds = 0.5 V. We also report on RF characterization of these devices. A small-signal hybrid-p model is developed, which includes both the effect of impact ionization and border traps and shows good fit to measurement data. Simultaneously extracted f(t) and fmax are 280 and 312 GHz, respectively, which are the highest reported values of any III-V multiple-gate MOSFET.}},
  author       = {{Zota, Cezar and Roll, Guntrade and Wernersson, Lars-Erik and Lind, Erik}},
  issn         = {{0018-9383}},
  keywords     = {{III-V; FinFET; InGaAs; MOSFET; MuGFET; RF; selective regrowth; trigate}},
  language     = {{eng}},
  number       = {{12}},
  pages        = {{4078--4083}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Transactions on Electron Devices}},
  title        = {{Radio-Frequency Characterization of Selectively Regrown InGaAs Lateral Nanowire MOSFETs}},
  url          = {{http://dx.doi.org/10.1109/TED.2014.2363732}},
  doi          = {{10.1109/TED.2014.2363732}},
  volume       = {{61}},
  year         = {{2014}},
}