A High-Frequency Transconductance Method for Characterization of High-k Border Traps in III-V MOSFETs
(2013) In IEEE Transactions on Electron Devices 60(2). p.776-781
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/3358266
- author
- Johansson, Sofia LU ; Berg, Martin LU ; Persson, Karl-Magnus LU and Lind, Erik LU
- organization
- publishing date
- 2013
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- transconductance, nanowire (NW), metal–oxide–semiconductor field-effect transistor (MOSFET), interface traps, high-$k$, frequency, border traps, InAs, InGaAs, Al2O3, HfO2
- in
- IEEE Transactions on Electron Devices
- volume
- 60
- issue
- 2
- pages
- 776 - 781
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- wos:000316817900035
- scopus:84872831051
- ISSN
- 0018-9383
- DOI
- 10.1109/TED.2012.2231867
- language
- English
- LU publication?
- yes
- id
- 4ce93a53-ace9-44b4-b1b9-1b0db56ab200 (old id 3358266)
- date added to LUP
- 2016-04-01 13:33:46
- date last changed
- 2023-11-12 18:33:46
@article{4ce93a53-ace9-44b4-b1b9-1b0db56ab200, author = {{Johansson, Sofia and Berg, Martin and Persson, Karl-Magnus and Lind, Erik}}, issn = {{0018-9383}}, keywords = {{transconductance; nanowire (NW); metal–oxide–semiconductor field-effect transistor (MOSFET); interface traps; high-$k$; frequency; border traps; InAs; InGaAs; Al2O3; HfO2}}, language = {{eng}}, number = {{2}}, pages = {{776--781}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{IEEE Transactions on Electron Devices}}, title = {{A High-Frequency Transconductance Method for Characterization of High-k Border Traps in III-V MOSFETs}}, url = {{https://lup.lub.lu.se/search/files/3450054/4285499.pdf}}, doi = {{10.1109/TED.2012.2231867}}, volume = {{60}}, year = {{2013}}, }