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A High-Frequency Transconductance Method for Characterization of High-k Border Traps in III-V MOSFETs

Johansson, Sofia LU ; Berg, Martin LU ; Persson, Karl-Magnus LU and Lind, Erik LU (2013) In IEEE Transactions on Electron Devices 60(2). p.776-781
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
transconductance, nanowire (NW), metal–oxide–semiconductor field-effect transistor (MOSFET), interface traps, high-$k$, frequency, border traps, InAs, InGaAs, Al2O3, HfO2
in
IEEE Transactions on Electron Devices
volume
60
issue
2
pages
776 - 781
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000316817900035
  • scopus:84872831051
ISSN
0018-9383
DOI
10.1109/TED.2012.2231867
language
English
LU publication?
yes
id
4ce93a53-ace9-44b4-b1b9-1b0db56ab200 (old id 3358266)
date added to LUP
2013-01-09 14:38:41
date last changed
2019-09-04 02:17:55
@article{4ce93a53-ace9-44b4-b1b9-1b0db56ab200,
  author       = {Johansson, Sofia and Berg, Martin and Persson, Karl-Magnus and Lind, Erik},
  issn         = {0018-9383},
  keyword      = {transconductance,nanowire (NW),metal–oxide–semiconductor field-effect transistor (MOSFET),interface traps,high-$k$,frequency,border traps,InAs,InGaAs,Al2O3,HfO2},
  language     = {eng},
  number       = {2},
  pages        = {776--781},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Transactions on Electron Devices},
  title        = {A High-Frequency Transconductance Method for Characterization of High-k Border Traps in III-V MOSFETs},
  url          = {http://dx.doi.org/10.1109/TED.2012.2231867},
  volume       = {60},
  year         = {2013},
}