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A High-Frequency Transconductance Method for Characterization of High-k Border Traps in III-V MOSFETs

Johansson, Sofia LU ; Berg, Martin LU ; Persson, Karl-Magnus LU and Lind, Erik LU (2013) In IEEE Transactions on Electron Devices 60(2). p.776-781
Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
transconductance, nanowire (NW), metal–oxide–semiconductor field-effect transistor (MOSFET), interface traps, high-$k$, frequency, border traps, InAs, InGaAs, Al2O3, HfO2
in
IEEE Transactions on Electron Devices
volume
60
issue
2
pages
776 - 781
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000316817900035
  • scopus:84872831051
ISSN
0018-9383
DOI
10.1109/TED.2012.2231867
language
English
LU publication?
yes
id
4ce93a53-ace9-44b4-b1b9-1b0db56ab200 (old id 3358266)
date added to LUP
2016-04-01 13:33:46
date last changed
2023-11-12 18:33:46
@article{4ce93a53-ace9-44b4-b1b9-1b0db56ab200,
  author       = {{Johansson, Sofia and Berg, Martin and Persson, Karl-Magnus and Lind, Erik}},
  issn         = {{0018-9383}},
  keywords     = {{transconductance; nanowire (NW); metal–oxide–semiconductor field-effect transistor (MOSFET); interface traps; high-$k$; frequency; border traps; InAs; InGaAs; Al2O3; HfO2}},
  language     = {{eng}},
  number       = {{2}},
  pages        = {{776--781}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Transactions on Electron Devices}},
  title        = {{A High-Frequency Transconductance Method for Characterization of High-k Border Traps in III-V MOSFETs}},
  url          = {{https://lup.lub.lu.se/search/files/3450054/4285499.pdf}},
  doi          = {{10.1109/TED.2012.2231867}},
  volume       = {{60}},
  year         = {{2013}},
}