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Electrical properties of InAs-based nanowires

Thelander, Claes LU ; Björk, Mikael LU ; Mårtensson, Thomas LU ; Larsson, Marcus LU ; Hansen, Adam LU ; Deppert, Knut LU ; Sköld, Niklas LU ; Wallenberg, Reine LU ; Seifert, Werner LU and Samuelson, Lars LU (2004) Electronic Properties of Synthetic Nanostructures. XVIII International Winterschool/Euroconference on Electronic Properties of Novel Materials In AIP Conference Proceedings 723. p.449-452
Abstract
Semiconductor nanowires are grown using chemical beam epitaxy and metal organic vapor phase epitaxy from size-selected gold nanoparticles acting as catalysts. By changing materials during the growth it is possible to form heterostructures both along the length of the nanowires but also in a core-shell fashion. In particular, incorporation of pairs of InP tunnel barriers in InAs nanowires has been used to fabricate single-electron transistors and resonant tunneling diodes
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
InAs-InP, Au, resonant tunneling diodes, catalysts, heterostructures, semiconductor nanowires, electrical properties, chemical beam epitaxy, gold nanoparticles, metal organic vapor phase epitaxy, single electron transistors, InP tunnel barriers
in
AIP Conference Proceedings
volume
723
pages
449 - 452
publisher
American Institute of Physics
conference name
Electronic Properties of Synthetic Nanostructures. XVIII International Winterschool/Euroconference on Electronic Properties of Novel Materials
external identifiers
  • wos:000224699400097
  • other:CODEN: APCPCS
ISSN
1551-7616
0094-243X
language
English
LU publication?
yes
id
d1c6e694-6ce8-4e19-b5ae-716f285fe0b7 (old id 613614)
date added to LUP
2007-12-04 08:36:59
date last changed
2016-04-15 19:32:03
@inproceedings{d1c6e694-6ce8-4e19-b5ae-716f285fe0b7,
  abstract     = {Semiconductor nanowires are grown using chemical beam epitaxy and metal organic vapor phase epitaxy from size-selected gold nanoparticles acting as catalysts. By changing materials during the growth it is possible to form heterostructures both along the length of the nanowires but also in a core-shell fashion. In particular, incorporation of pairs of InP tunnel barriers in InAs nanowires has been used to fabricate single-electron transistors and resonant tunneling diodes},
  author       = {Thelander, Claes and Björk, Mikael and Mårtensson, Thomas and Larsson, Marcus and Hansen, Adam and Deppert, Knut and Sköld, Niklas and Wallenberg, Reine and Seifert, Werner and Samuelson, Lars},
  booktitle    = {AIP Conference Proceedings},
  issn         = {1551-7616},
  keyword      = {InAs-InP,Au,resonant tunneling diodes,catalysts,heterostructures,semiconductor nanowires,electrical properties,chemical beam epitaxy,gold nanoparticles,metal organic vapor phase epitaxy,single electron transistors,InP tunnel barriers},
  language     = {eng},
  pages        = {449--452},
  publisher    = {American Institute of Physics},
  title        = {Electrical properties of InAs-based nanowires},
  volume       = {723},
  year         = {2004},
}