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InGaN Platelets : Synthesis and Applications toward Green and Red Light-Emitting Diodes

Bi, Zhaoxia LU orcid ; Lenrick, Filip LU orcid ; Colvin, Jovana LU ; Gustafsson, Anders LU orcid ; Hultin, Olof LU ; Nowzari, Ali LU ; Lu, Taiping LU ; Wallenberg, Reine LU ; Timm, Rainer LU orcid and Mikkelsen, Anders LU , et al. (2019) In Nano Letters
Abstract


In this work, we present a method to synthesize arrays of hexagonal InGaN submicrometer platelets with a top c-plane area having an extension of a few hundred nanometers by selective area metal-organic vapor-phase epitaxy. The InGaN platelets were made by in situ annealing of InGaN pyramids, whereby InGaN from the pyramid apex was thermally etched away, leaving a c-plane surface, while the inclined {101Ì1} planes of the pyramids were intact. The as-formed c-planes, which are rough with islands of a few tens of nanometers, can be flattened with InGaN regrowth, showing single bilayer steps and high-quality optical properties (full width at half-maximum of photoluminescence at... (More)


In this work, we present a method to synthesize arrays of hexagonal InGaN submicrometer platelets with a top c-plane area having an extension of a few hundred nanometers by selective area metal-organic vapor-phase epitaxy. The InGaN platelets were made by in situ annealing of InGaN pyramids, whereby InGaN from the pyramid apex was thermally etched away, leaving a c-plane surface, while the inclined {101Ì1} planes of the pyramids were intact. The as-formed c-planes, which are rough with islands of a few tens of nanometers, can be flattened with InGaN regrowth, showing single bilayer steps and high-quality optical properties (full width at half-maximum of photoluminescence at room temperature: 107 meV for In
0.09
Ga
0.91
N and 151 meV for In
0.18
Ga
0.82
N). Such platelets offer surfaces having relaxed lattice constants, thus enabling shifting the quantum well emission from blue (as when grown on GaN) to green and red. For single InGaN quantum wells grown on the c-plane of such InGaN platelets, a sharp interface between the quantum well and the barriers was observed. The emission energy from the quantum well, grown under the same conditions, was shifted from 2.17 eV on In
0.09
Ga
0.91
N platelets to 1.95 eV on In
0.18
Ga
0.82
N platelets as a result of a thicker quantum well and a reduced indium pulling effect on In
0.18
Ga
0.82
N platelets. On the basis of this method, prototype light-emitting diodes were demonstrated with green emission on In
0.09
Ga
0.91
N platelets and red emission on In
0.18
Ga
0.82
N platelets.

(Less)
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organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
InGaN, light-emitting diodes, metal-organic vapor-phase epitaxy, platelets, selective area growth
in
Nano Letters
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:85064872288
  • pmid:30938533
ISSN
1530-6984
DOI
10.1021/acs.nanolett.8b04781
language
English
LU publication?
yes
id
ed2faca6-6c46-4640-86dc-e820d4b34991
date added to LUP
2019-05-08 13:30:53
date last changed
2024-06-12 13:05:38
@article{ed2faca6-6c46-4640-86dc-e820d4b34991,
  abstract     = {{<p><br>
                                                         In this work, we present a method to synthesize arrays of hexagonal InGaN submicrometer platelets with a top c-plane area having an extension of a few hundred nanometers by selective area metal-organic vapor-phase epitaxy. The InGaN platelets were made by in situ annealing of InGaN pyramids, whereby InGaN from the pyramid apex was thermally etched away, leaving a c-plane surface, while the inclined {101Ì1} planes of the pyramids were intact. The as-formed c-planes, which are rough with islands of a few tens of nanometers, can be flattened with InGaN regrowth, showing single bilayer steps and high-quality optical properties (full width at half-maximum of photoluminescence at room temperature: 107 meV for In                             <br>
                            <sub>0.09</sub><br>
                                                         Ga                             <br>
                            <sub>0.91</sub><br>
                                                         N and 151 meV for In                             <br>
                            <sub>0.18</sub><br>
                                                         Ga                             <br>
                            <sub>0.82</sub><br>
                                                         N). Such platelets offer surfaces having relaxed lattice constants, thus enabling shifting the quantum well emission from blue (as when grown on GaN) to green and red. For single InGaN quantum wells grown on the c-plane of such InGaN platelets, a sharp interface between the quantum well and the barriers was observed. The emission energy from the quantum well, grown under the same conditions, was shifted from 2.17 eV on In                             <br>
                            <sub>0.09</sub><br>
                                                         Ga                             <br>
                            <sub>0.91</sub><br>
                                                         N platelets to 1.95 eV on In                             <br>
                            <sub>0.18</sub><br>
                                                         Ga                             <br>
                            <sub>0.82</sub><br>
                                                         N platelets as a result of a thicker quantum well and a reduced indium pulling effect on In                             <br>
                            <sub>0.18</sub><br>
                                                         Ga                             <br>
                            <sub>0.82</sub><br>
                                                         N platelets. On the basis of this method, prototype light-emitting diodes were demonstrated with green emission on In                             <br>
                            <sub>0.09</sub><br>
                                                         Ga                             <br>
                            <sub>0.91</sub><br>
                                                         N platelets and red emission on In                             <br>
                            <sub>0.18</sub><br>
                                                         Ga                             <br>
                            <sub>0.82</sub><br>
                                                         N platelets.                         <br>
                        </p>}},
  author       = {{Bi, Zhaoxia and Lenrick, Filip and Colvin, Jovana and Gustafsson, Anders and Hultin, Olof and Nowzari, Ali and Lu, Taiping and Wallenberg, Reine and Timm, Rainer and Mikkelsen, Anders and Ohlsson, B. Jonas and Storm, Kristian and Monemar, Bo and Samuelson, Lars}},
  issn         = {{1530-6984}},
  keywords     = {{InGaN; light-emitting diodes; metal-organic vapor-phase epitaxy; platelets; selective area growth}},
  language     = {{eng}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Nano Letters}},
  title        = {{InGaN Platelets : Synthesis and Applications toward Green and Red Light-Emitting Diodes}},
  url          = {{http://dx.doi.org/10.1021/acs.nanolett.8b04781}},
  doi          = {{10.1021/acs.nanolett.8b04781}},
  year         = {{2019}},
}