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- 2011
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Mark
Parameter space mapping of InAs nanowire crystal structure
(
- Contribution to journal › Article
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Mark
Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88(4). p.444-447(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
(
- Contribution to journal › Article
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Mark
InSb Nanowire Field-Effect Transistors and Quantum-Dot Devices
(
- Contribution to journal › Article
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Mark
Phonon Transport and Thermoelectricity in Twinned InAs Nanowires
2011) MRS Fall Meeting, 2011(
- Contribution to conference › Paper, not in proceeding
-
Mark
Unit Cell Structure of Crystal Polytypes in InAs and InSb Nanowires
(
- Contribution to journal › Article
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Mark
Thermal conductivity of indium arsenide nanowires with wurtzite and zinc blende phases
(
- Contribution to journal › Article
- 2010
-
Mark
Crystalline properties and applications of II-V nanowires
2010) 18th intl symp Nanostructures: physics and technology(
- Contribution to conference › Paper, not in proceeding
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Mark
Crystal Phase Engineering in Single InAs Nanowires.
(
- Contribution to journal › Article
-
Mark
Direct integration of GaAs/GaAsSb nanowires grown by MBE on SI without extrinsic metal particle
2010) MRS Spring Meeting, 2010(
- Contribution to conference › Paper, not in proceeding