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- 2016
-
Mark
Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts
(
- Contribution to journal › Article
-
Mark
Growth of High Material Quality Group III-Antimonide Semiconductor Nanowires by a Naturally Cooling Process
(
- Contribution to journal › Article
-
Mark
Weak antilocalization and electron-electron interaction in coupled multiple-channel transport in a Bi2Se3 thin film.
(
- Contribution to journal › Article
- 2015
-
Mark
Patterning two-dimensional chalcogenide crystals of Bi2Se3 and In2Se3 and efficient photodetectors.
(
- Contribution to journal › Article
- 2014
-
Mark
Suspended InAsnanowire gate-all-around field-effect transistors
(
- Contribution to journal › Article
- 2013
-
Mark
Si and Ge nanowire based quantum dots for spin qubits
2013) Lund-Tokyo-Copenhagen-Beijing Joint Workhop on Quantum Devices(
- Contribution to conference › Abstract
-
Mark
Synthesis, properties, and top-gated metal-oxide-semiconductor field-effect transistors of p-type GaSb nanowires
(
- Contribution to journal › Article
-
Mark
Enhanced Anisotropic Effective g Factors of an Al10.25Ga0.75N/GaN Heterostructure Based Quantum Point Contact
(
- Contribution to journal › Article
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