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- 2012
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Mark
Single InAs/GaSb Nanowire Low-Power CMOS Inverter
2012) In Nano Letters(
- Contribution to journal › Article
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Mark
Vertical InAs nanowire MOSFETs with IDS = 1.34 mA/µm and gm = 1.19 mS/µm at VDS = 0.5 V
(
- Contribution to journal › Published meeting abstract
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Mark
High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
(
- Contribution to journal › Article
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Mark
1/f Noise Sources in Dual-Gated Indium Arsenide Nanowire Transistors
(
- Contribution to journal › Article
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Mark
High-Performance InAs Nanowire MOSFETs
(
- Contribution to journal › Article
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Mark
In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator
(
- Contribution to journal › Article
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Mark
Thin InAs membranes and GaSb buffer layers on GaAs(001) substrates
(
- Contribution to journal › Article
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Mark
Uniform and position-controlled InAs nanowires on 2('') Si substrates for transistor applications.
(
- Contribution to journal › Article
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Mark
Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices
(
- Contribution to journal › Article
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Mark
Carrier control and transport modulation in GaSb/InAsSb core/shell nanowires
(
- Contribution to journal › Article