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High-Performance InAs Nanowire MOSFETs

Dey, Anil LU ; Thelander, Claes LU ; Lind, Erik LU orcid ; Dick Thelander, Kimberly LU ; Borg, Mattias LU orcid ; Borgström, Magnus LU orcid ; Nilsson, Peter LU and Wernersson, Lars-Erik LU (2012) In IEEE Electron Device Letters 33(6). p.791-793
Abstract
In this letter, we present a 15-nm-diameter InAs nanowire MOSFET with excellent on and off characteristics. An n-i-n doping profile was used to reduce the source and drain resistances, and an Al2O3/HfO2 bilayer was introduced in the high-k process. The nanowires exhibit high drive currents, up to 1.25 A/mm, normalized to the nanowire circumference, and current densities up to 34 MA/cm2 (VD = 0.5 V). For a nominal LG = 100 nm, we observe an extrinsic transconductance (gm) of 1.23 S/mm and a subthreshold swing of 93 mV/decade at VD = 10 mV.
Please use this url to cite or link to this publication:
author
; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
IEEE Electron Device Letters
volume
33
issue
6
pages
791 - 793
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000305835000017
  • scopus:84861674649
ISSN
0741-3106
DOI
10.1109/LED.2012.2190132
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Electrical and information technology (011041010), Polymer and Materials Chemistry (LTH) (011001041)
id
17de7e65-eb0c-4b2e-8669-3ec505795208 (old id 2858283)
date added to LUP
2016-04-01 13:42:08
date last changed
2025-10-14 09:35:49
@article{17de7e65-eb0c-4b2e-8669-3ec505795208,
  abstract     = {{In this letter, we present a 15-nm-diameter InAs nanowire MOSFET with excellent on and off characteristics. An n-i-n doping profile was used to reduce the source and drain resistances, and an Al2O3/HfO2 bilayer was introduced in the high-k process. The nanowires exhibit high drive currents, up to 1.25 A/mm, normalized to the nanowire circumference, and current densities up to 34 MA/cm2 (VD = 0.5 V). For a nominal LG = 100 nm, we observe an extrinsic transconductance (gm) of 1.23 S/mm and a subthreshold swing of 93 mV/decade at VD = 10 mV.}},
  author       = {{Dey, Anil and Thelander, Claes and Lind, Erik and Dick Thelander, Kimberly and Borg, Mattias and Borgström, Magnus and Nilsson, Peter and Wernersson, Lars-Erik}},
  issn         = {{0741-3106}},
  language     = {{eng}},
  number       = {{6}},
  pages        = {{791--793}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Electron Device Letters}},
  title        = {{High-Performance InAs Nanowire MOSFETs}},
  url          = {{https://lup.lub.lu.se/search/files/3540295/3171724.pdf}},
  doi          = {{10.1109/LED.2012.2190132}},
  volume       = {{33}},
  year         = {{2012}},
}