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- 2011
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Mark
GaSb nanowire single-hole transistor
(
- Contribution to journal › Article
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Mark
Interface composition of InAs nanowires with Al2O2 and HfO2 thin films
(
- Contribution to journal › Article
-
Mark
Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
(
- Contribution to journal › Article
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Mark
Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality
(
- Contribution to journal › Article
-
Mark
15 nm diameter InAs nanowire MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding